STMicroelectronics STPSC2H12B2Y-TR Rectifier Diodes
Automotive 1200 V, 2 A High surge Silicon Carbide Diode
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
STPSC2H12B2Y-TR
Detailed Description
Automotive 1200 V, 2 A High surge Silicon Carbide Diode
Package
TO-252-3, DPAK (2 Leads + Tab), SC-63
Lifecycle Status
Active
Datasheet
STPSC2H12B2Y-TR Datasheet
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Technical Specifications
STMicroelectronics STPSC2H12B2Y-TR Rectifier Diodes technical specifications.
General
Package / Case
TO-252-3, DPAK
Mounting Type
Surface Mount
Lifecycle Status
Active
Description
DIODE SIL CARBIDE 1200V 5A DPAK
Detailed Description
Diode 1200 V 5A Surface Mount DPAK
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Current Reverse Leakage Vr
12 µA @ 1200 V
Capacitance Vr F
190pF @ 0V, 1MHz
Technology
SiC (Silicon Carbide) Schottky
Voltage Dc Reverse Vr Max
1200 V
Alternate Parts Comparison (STPSC2H12B2Y-TR vs STPSC8H065BY-TR vs STPSC2H12B-TR1 vs STPSC8H065B-TR)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-252-3, DPAK | TO-252-3, DPAK | TO-252-3, DPAK | TO-252-3, DPAK |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Lifecycle Status | Active | Active | Obsolete | Active |
| Capacitance Vr F | 190pF @ 0V, 1MHz | 414pF @ 0V, 1MHz | 190pF @ 0V, 1MHz | 414pF @ 0V, 1MHz |
| Current Average Rectified IO | 5A | 8A | 5A | 8A |
| Current Reverse Leakage Vr | 12 µA @ 1200 V | 80 µA @ 650 V | 12 µA @ 1200 V | 80 µA @ 650 V |
| Description | DIODE SIL CARBIDE 1200V 5A DPAK | DIODE SIL CARBIDE 650V 8A DPAK | DIODE SIL CARBIDE 1200V 5A DPAK | DIODE SIL CARBIDE 650V 8A DPAK |
| Detailed Description | Diode 1200 V 5A Surface Mount DPAK | Diode 650 V 8A Surface Mount DPAK | Diode 1200 V 5A Surface Mount DPAK | Diode 650 V 8A Surface Mount DPAK |
| Operating Temperature Junction | -40°C ~ 175°C | -40°C ~ 175°C | -40°C ~ 175°C | -40°C ~ 175°C |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | Zero Recovery Time > 500mA (Io) | Zero Recovery Time > 500mA (Io) | Zero Recovery Time > 500mA (Io) |
| Technology | SiC (Silicon Carbide) Schottky | SiC (Silicon Carbide) Schottky | SiC (Silicon Carbide) Schottky | SiC (Silicon Carbide) Schottky |
| Voltage Dc Reverse Vr Max | 1200 V | 650 V | 1200 V | 650 V |
| Action |
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