onsemi FFSB10120A-F085 Rectifier Diodes
SiC Diode, 1200V, 10A, D2PAK, 800-REEL
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
FFSB10120A-F085
Detailed Description
SiC Diode, 1200V, 10A, D2PAK, 800-REEL
Package
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Lifecycle Status
Active
Datasheet
FFSB10120A-F085 Datasheet
Quick Jump:
Technical Specifications
onsemi FFSB10120A-F085 Rectifier Diodes technical specifications.
General
Package / Case
TO-263-3, D2PAK
Mounting Type
Surface Mount
Lifecycle Status
Active
Current Reverse Leakage Vr
200 µA @ 1200 V
Capacitance Vr F
612pF @ 1V, 100kHz
Grade
Automotive
Qualification
AEC-Q101
Technology
SiC (Silicon Carbide) Schottky
Voltage Dc Reverse Vr Max
1200 V
Current Average Rectified IO
21A
Alternate Parts Comparison (FFSB10120A-F085 vs FFSB20120A vs FFSB3065B-F085 vs 1N4148WS)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-263-3, D2PAK | TO-263-3, D2PAK | TO-263-3, D2PAK | SC-90, SOD-323F |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Lifecycle Status | Active | Active | Active | Production |
| Capacitance Vr F | 612pF @ 1V, 100kHz | 1220pF @ 1V, 100KHz | 1280pF @ 1V, 100kHz | 4pF @ 0V, 1MHz |
| Current Average Rectified IO | 21A | 32A | 73A | 150mA |
| Current Reverse Leakage Vr | 200 µA @ 1200 V | 200 µA @ 1200 V | 40 µA @ 650 V | 5 µA @ 75 V |
| Operating Temperature Junction | -55°C ~ 175°C | -55°C ~ 175°C | -55°C ~ 175°C | 150°C (Max) |
| Speed | Zero Recovery Time > 500mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Zero Recovery Time > 500mA (Io) | Small Signal =< 200mA (Io), Any Speed |
| Technology | SiC (Silicon Carbide) Schottky | SiC (Silicon Carbide) Schottky | SiC (Silicon Carbide) Schottky | Standard |
| Voltage Dc Reverse Vr Max | 1200 V | 1200 V | 650 V | 75 V |
| Voltage Forward Vf Max If | 1.75 V @ 10 A | 1.75 V @ 20 A | 1.7 V @ 30 A | 1 V @ 10 mA |
| Reverse Recovery Time Trr | 0 ns | -- | 0 ns | 4 ns |
| Action |
Cross Reference
Manufacturer-stated alternates from official cross-reference tools. These are not a guaranteed pin-compatible drop-in. Qualify package, pinout, and electrical limits against the datasheet before a board change. See cross-reference vs drop-in compatible .
This part is listed as a cross for
STPSC2H12B2Y-TRSTMicroelectronicsSimilaronsemi
Pin YesPkg YesElec Mixed
Automotive 1200 V, 2 A High surge Silicon Carbide Diode
VS-8EWS12SLHM3VishaySimilaronsemi
Pin YesPkg NoElec Mixed
Rectifier Diode,
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