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STMicroelectronics STN951 BJTs

PNP BJT Transistor, 60V, 5A, 130MHz, SOT-223, SMD

15,000 ActiveSTMicroelectronicsTO-261-4, TO-261AA$0.65
STN951 TO-261-4, TO-261AA package illustration

Same model may have multiple batches, images only for reference.

STN951
Manufacturer
Part Number (MPN)
STN951
Detailed Description
PNP BJT Transistor, 60V, 5A, 130MHz, SOT-223, SMD
Package
TO-261-4, TO-261AA
Lifecycle Status
Active
Datasheet
PDF STN951 Datasheet
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Technical Specifications

STMicroelectronics STN951 BJTs technical specifications.

General

Package / Case
TO-261-4, TO-261AA
Mounting Type
Surface Mount
Operating Temperature
150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
150 @ 2A, 1V
Power Max
1.6 W
Frequency Transition
130MHz
Transistor Type
PNP
Current Collector IC Max
5 A
Voltage Collector Emitter Breakdown Max
60 V

Alternate Parts Comparison (STN951 vs STN9260 vs STN9360 vs STNS01PUR)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-261-4, TO-261AATO-261-4, TO-261AATO-261-4, TO-261AA12-WFDFN Exposed Pad
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature150°C (TJ)150°C (TJ)150°C (TJ)-40°C ~ 85°C (TA)
Lifecycle StatusActiveProductionProductionActive
Current Collector Cutoff Max100nA (ICBO)10µA10µA--
Current Collector IC Max5 A500 mA500 mA--
Dc Current Gain Hfe Min IC Vce150 @ 2A, 1V50 @ 20mA, 5V120 @ 20mA, 5V--
Power Max1.6 W1.6 W1.6 W--
Transistor TypePNPPNPPNP--
Vce Saturation Max Ib IC500mV @ 200mA, 5A1V @ 10mA, 100mA500mV @ 10mA, 100mA--
Voltage Collector Emitter Breakdown Max60 V600 V600 V--
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