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STMicroelectronics STN0214 BJTs

Very high voltage NPN power transistor

5,000 ActiveSTMicroelectronicsTO-261-4, TO-261AA$0.84
STN0214 TO-261-4, TO-261AA package illustration

Same model may have multiple batches, images only for reference.

STN0214
Manufacturer
Part Number (MPN)
STN0214
Detailed Description
Very high voltage NPN power transistor
Package
TO-261-4, TO-261AA
Lifecycle Status
Active
Datasheet
PDF STN0214 Datasheet
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Technical Specifications

STMicroelectronics STN0214 BJTs technical specifications.

General

Package / Case
TO-261-4, TO-261AA
Mounting Type
Surface Mount
Operating Temperature
150°C (TJ)
Lifecycle Status
Active
Current Collector Cutoff Max
10µA
Dc Current Gain Hfe Min IC Vce
3 @ 200mA, 2V
Power Max
1.6 W
Transistor Type
NPN
Current Collector IC Max
200 mA
Voltage Collector Emitter Breakdown Max
1200 V

Alternate Parts Comparison (STN0214 vs STN9260 vs STN9360 vs STNS01PUR)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-261-4, TO-261AATO-261-4, TO-261AATO-261-4, TO-261AA12-WFDFN Exposed Pad
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature150°C (TJ)150°C (TJ)150°C (TJ)-40°C ~ 85°C (TA)
Lifecycle StatusActiveProductionProductionActive
Current Collector Cutoff Max10µA10µA10µA--
Current Collector IC Max200 mA500 mA500 mA--
Dc Current Gain Hfe Min IC Vce3 @ 200mA, 2V50 @ 20mA, 5V120 @ 20mA, 5V--
Power Max1.6 W1.6 W1.6 W--
Transistor TypeNPNPNPPNP--
Vce Saturation Max Ib IC300 mV @ 20mA, 100mA1V @ 10mA, 100mA500mV @ 10mA, 100mA--
Voltage Collector Emitter Breakdown Max1200 V600 V600 V--
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More Parts in BJTs

Browse additional parts from the same category, grouped by series, package type, and manufacturer. These are catalog suggestions — not verified pin-compatible alternates.