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STMicroelectronics STN0214 BJTs

Very high voltage NPN power transistor

5,000 ActiveSTMicroelectronicsTO-261-4, TO-261AA$0.84
STN0214 TO-261-4, TO-261AA package illustration

Same model may have multiple batches, images only for reference.

STN0214
Manufacturer
Part Number (MPN)
STN0214
Detailed Description
Very high voltage NPN power transistor
Package
TO-261-4, TO-261AA
Lifecycle Status
Active
Datasheet
PDF STN0214 Datasheet
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Technical Specifications

STMicroelectronics STN0214 BJTs technical specifications.

General

Package / Case
TO-261-4, TO-261AA
Mounting Type
Surface Mount
Operating Temperature
150°C (TJ)
Lifecycle Status
Active
Current Collector Cutoff Max
10µA
Dc Current Gain Hfe Min IC Vce
3 @ 200mA, 2V
Power Max
1.6 W
Transistor Type
NPN
Current Collector IC Max
200 mA
Voltage Collector Emitter Breakdown Max
1200 V

Related Parts Comparison (STN0214 vs STN9260 vs STN9360 vs STNS01PUR)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
Package / CaseTO-261-4, TO-261AATO-261-4, TO-261AATO-261-4, TO-261AA12-WFDFN Exposed Pad
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature150°C (TJ)150°C (TJ)150°C (TJ)-40°C ~ 85°C (TA)
Lifecycle StatusActiveProductionProductionActive
Current Collector Cutoff Max10µA10µA10µA--
Current Collector IC Max200 mA500 mA500 mA--
Dc Current Gain Hfe Min IC Vce3 @ 200mA, 2V50 @ 20mA, 5V120 @ 20mA, 5V--
Power Max1.6 W1.6 W1.6 W--
Transistor TypeNPNPNPPNP--
Vce Saturation Max Ib IC300 mV @ 20mA, 100mA1V @ 10mA, 100mA500mV @ 10mA, 100mA--
Voltage Collector Emitter Breakdown Max1200 V600 V600 V--
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