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STMicroelectronics 2STN1550 BJTs

Low voltage high performance NPN power transistors

8,936 ActiveSTMicroelectronicsTO-261-4, TO-261AA$0.70
2STN1550 TO-261-4, TO-261AA package illustration

Same model may have multiple batches, images only for reference.

2STN1550
Manufacturer
Part Number (MPN)
2STN1550
Detailed Description
Low voltage high performance NPN power transistors
Package
TO-261-4, TO-261AA
Lifecycle Status
Active
Datasheet
PDF 2STN1550 Datasheet
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Technical Specifications

STMicroelectronics 2STN1550 BJTs technical specifications.

General

Package / Case
TO-261-4, TO-261AA
Mounting Type
Surface Mount
Operating Temperature
150°C (TJ)
Lifecycle Status
Active
Current Collector Cutoff Max
100nA (ICBO)
Dc Current Gain Hfe Min IC Vce
135 @ 2A, 2V
Power Max
1.6 W
Transistor Type
NPN
Current Collector IC Max
5 A
Voltage Collector Emitter Breakdown Max
50 V

Alternate Parts Comparison (2STN1550 vs MJE3055T vs TIP31A vs ST13003)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Mounting TypeSurface MountThrough HoleThrough HoleThrough Hole
Operating Temperature150°C (TJ)150°C (TJ)150°C (TJ)-65 °C ~ 150 °C
Lifecycle StatusActiveProductionProductionProduction
Package / CaseTO-261-4, TO-261AATO-220-3TO-220-3--
Current Collector Cutoff Max100nA (ICBO)700µA300µA--
Current Collector IC Max5 A10 A3 A--
Dc Current Gain Hfe Min IC Vce135 @ 2A, 2V20 @ 4A, 4V10 @ 3A, 4V--
Power Max1.6 W75 W2 W--
Transistor TypeNPNNPNNPN--
Vce Saturation Max Ib IC450mV @ 300mA, 3A8V @ 3.3A, 10A1.2V @ 375mA, 3A--
Voltage Collector Emitter Breakdown Max50 V60 V60 V--
Number of Pins--333
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