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STMicroelectronics STGWA50IH65DF BJTs

Trans IGBT Chip N-CH 650V 100A 300000mW 3-Pin(3+Tab) TO-247 Tube

65,300 ActiveSTMicroelectronicsTO-247$4.41
STGWA50IH65DF - No Image Available

Same model may have multiple batches, images only for reference.

STGWA50IH65DF
Manufacturer
Part Number (MPN)
STGWA50IH65DF
Detailed Description
Trans IGBT Chip N-CH 650V 100A 300000mW 3-Pin(3+Tab) TO-247 Tube
Package
TO-247
Lifecycle Status
Active
Datasheet
PDF STGWA50IH65DF Datasheet
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Technical Specifications

STMicroelectronics STGWA50IH65DF BJTs technical specifications.

General

Series
IH
Package / Case
TO-247-3
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 175°C (TJ)
Lifecycle Status
Active
Switching Energy
284µJ (off)
Input Type
Standard
Gate Charge
158 nC
Td on Off 25 C
-/260ns
Test Condition
400V, 50A, 22Ohm, 15V

Alternate Parts Comparison (STGWA50IH65DF vs STGWA25M120DF3 vs STGWA30M65DF2 vs STGWA30H65DFB2)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-247-3TO-247-3TO-247-3TO-247-3
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)
Lifecycle StatusActiveActiveActiveActive
Current Collector IC Max100 A50 A60 A50 A
Current Collector Pulsed Icm150 A100 A120 A90 A
Gate Charge158 nC85 nC80 nC90 nC
Igbt TypeTrench Field StopTrench Field StopTrench Field StopTrench Field Stop
Input TypeStandardStandardStandardStandard
Power Max300 W375 W258 W167 W
Switching Energy284µJ (off)850µJ (on), 1.3mJ (off)300µJ (on), 960µJ (off)270µJ (on), 310µJ (off)
Td on Off 25 C-/260ns28ns/150ns31.6ns/115ns18.4ns/71ns
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