STMicroelectronics STGWA30M65DF2 BJTs
Trans IGBT Chip N-CH 650V 60A 258000mW 3-Pin(3+Tab) TO-247 Tube
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
STGWA30M65DF2
Detailed Description
Trans IGBT Chip N-CH 650V 60A 258000mW 3-Pin(3+Tab) TO-247 Tube
Package
TO-247-3
Lifecycle Status
Active
Datasheet
STGWA30M65DF2 Datasheet
Quick Jump:
Technical Specifications
STMicroelectronics STGWA30M65DF2 BJTs technical specifications.
General
Package / Case
TO-247-3
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 175°C (TJ)
Lifecycle Status
Active
Input Type
Standard
Gate Charge
80 nC
Td on Off 25 C
31.6ns/115ns
Test Condition
400V, 30A, 10Ohm, 15V
Igbt Type
Trench Field Stop
Reverse Recovery Time Trr
140 ns
Alternate Parts Comparison (STGWA30M65DF2 vs STGWA75H65DFB2 vs STGWA50M65DF2 vs STGWA25M120DF3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-247-3 | TO-247-3 | TO-247-3 | TO-247-3 |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Lifecycle Status | Active | Active | Active | Active |
| Current Collector IC Max | 60 A | 115 A | 80 A | 50 A |
| Current Collector Pulsed Icm | 120 A | 225 A | 150 A | 100 A |
| Gate Charge | 80 nC | 207 nC | 150 nC | 85 nC |
| Igbt Type | Trench Field Stop | Trench Field Stop | Trench Field Stop | Trench Field Stop |
| Input Type | Standard | Standard | Standard | Standard |
| Power Max | 258 W | 357 W | 375 W | 375 W |
| Reverse Recovery Time Trr | 140 ns | 88 ns | 162 ns | 265 ns |
| Switching Energy | 300µJ (on), 960µJ (off) | 1.428mJ (on), 1.05mJ (off) | 880µJ (on), 1.57mJ (off) | 850µJ (on), 1.3mJ (off) |
| Action |
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