STMicroelectronics STGW30NC60WD BJTs
600V 60A IGBT Transistor TO-247
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
STGW30NC60WD
Base Model
Detailed Description
600V 60A IGBT Transistor TO-247
Package
TO-247-3
Lifecycle Status
Active
Datasheet
STGW30NC60WD Datasheet
Quick Jump:
Technical Specifications
STMicroelectronics STGW30NC60WD BJTs technical specifications.
General
Series
PowerMESH™
Package / Case
TO-247-3
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Input Type
Standard
Gate Charge
102 nC
Td on Off 25 C
29.5ns/118ns
Test Condition
390V, 20A, 10Ohm, 15V
Reverse Recovery Time Trr
40 ns
Alternate Parts Comparison (STGW30NC60WD vs STGW30NC120HD vs STGW30NC60VD vs STGW30NC60KD)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Series | PowerMESH™ | PowerMESH™ | PowerMESH™ | PowerMESH™ |
| Package / Case | TO-247-3 | TO-247-3 | TO-247-3 | TO-247-3 |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Lifecycle Status | Active | Active | Obsolete | Active |
| Current Collector IC Max | 60 A | 60 A | 80 A | 60 A |
| Description | -- | -- | -- | -- |
| Detailed Description | -- | -- | -- | -- |
| Gate Charge | 102 nC | 110 nC | 100 nC | 96 nC |
| Input Type | Standard | Standard | Standard | Standard |
| Power Max | 200 W | 220 W | 250 W | 200 W |
| Reverse Recovery Time Trr | 40 ns | 152 ns | 44 ns | 40 ns |
| Action |
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