STMicroelectronics STGW30NC60VD BJTs
40 A, 600 V, very fast IGBT with Ultrafast diode

Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
STGW30NC60VD
Base Model
Detailed Description
40 A, 600 V, very fast IGBT with Ultrafast diode
Package
TO-247-3
Lifecycle Status
Obsolete
Datasheet
STGW30NC60VD Datasheet
Quick Jump:
Technical Specifications
STMicroelectronics STGW30NC60VD BJTs technical specifications.
General
Series
PowerMESH™
Package / Case
TO-247-3
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Obsolete
Input Type
Standard
Gate Charge
100 nC
Td on Off 25 C
31ns/100ns
Test Condition
390V, 20A, 3.3Ohm, 15V
Reverse Recovery Time Trr
44 ns
Alternate Parts Comparison (STGW30NC60VD vs STGW30NC120HD vs STGW30NC60WD vs STGW30NC60KD)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Series | PowerMESH™ | PowerMESH™ | PowerMESH™ | PowerMESH™ |
| Package / Case | TO-247-3 | TO-247-3 | TO-247-3 | TO-247-3 |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Lifecycle Status | Obsolete | Active | Active | Active |
| Current Collector IC Max | 80 A | 60 A | 60 A | 60 A |
| Description | -- | -- | -- | -- |
| Detailed Description | -- | -- | -- | -- |
| Gate Charge | 100 nC | 110 nC | 102 nC | 96 nC |
| Input Type | Standard | Standard | Standard | Standard |
| Power Max | 250 W | 220 W | 200 W | 200 W |
| Reverse Recovery Time Trr | 44 ns | 152 ns | 40 ns | 40 ns |
| Action |
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