STMicroelectronics STGF10NB60SD BJTs
600V 10A IGBT TO-220, Soft/Fast Recovery Diode
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
STGF10NB60SD
Detailed Description
600V 10A IGBT TO-220, Soft/Fast Recovery Diode
Package
TO-220-3 Full Pack
Lifecycle Status
Active
Datasheet
STGF10NB60SD Datasheet
Quick Jump:
Technical Specifications
STMicroelectronics STGF10NB60SD BJTs technical specifications.
General
Series
PowerMESH™
Package / Case
TO-220-3 Full Pack
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Input Type
Standard
Gate Charge
33 nC
Td on Off 25 C
700ns/1.2µs
Test Condition
480V, 10A, 1kOhm, 15V
Reverse Recovery Time Trr
37 ns
Alternate Parts Comparison (STGF10NB60SD vs STGF7H60DF vs STGF15M65DF2 vs STGF19NC60WD)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-220-3 Full Pack |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) |
| Lifecycle Status | Active | Active | Active | Obsolete |
| Current Collector IC Max | 23 A | 14 A | 30 A | 14 A |
| Description | -- | -- | -- | -- |
| Detailed Description | -- | -- | -- | -- |
| Gate Charge | 33 nC | 46 nC | 45 nC | 53 nC |
| Input Type | Standard | Standard | Standard | Standard |
| Power Max | 25 W | 24 W | 31 W | 32 W |
| Reverse Recovery Time Trr | 37 ns | 136 ns | 142 ns | 31 ns |
| Switching Energy | 600µJ (on), 5mJ (off) | 99µJ (on), 100µJ (off) | 90µJ (on), 450µJ (off) | 81µJ (on), 125µJ (off) |
| Action |
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