STMicroelectronics STGF10M65DF2 BJTs
Trench gate field-stop IGBT M series, 650 V 10 A low loss
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
STGF10M65DF2
Detailed Description
Trench gate field-stop IGBT M series, 650 V 10 A low loss
Package
TO-220-3 Full Pack
Lifecycle Status
Active
Datasheet
STGF10M65DF2 Datasheet
Quick Jump:
Technical Specifications
STMicroelectronics STGF10M65DF2 BJTs technical specifications.
General
Series
M
Package / Case
TO-220-3 Full Pack
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 175°C (TJ)
Lifecycle Status
Active
Switching Energy
120µJ (on), 270µJ (off)
Input Type
Standard
Gate Charge
28 nC
Td on Off 25 C
19ns/91ns
Test Condition
400V, 10A, 22Ohm, 15V
Alternate Parts Comparison (STGF10M65DF2 vs STGF19NC60WD vs STGF7H60DF vs STGF19NC60KD)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-220-3 Full Pack |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) |
| Lifecycle Status | Active | Obsolete | Active | Active |
| Current Collector IC Max | 20 A | 14 A | 14 A | 16 A |
| Description | -- | -- | -- | -- |
| Detailed Description | -- | -- | -- | -- |
| Gate Charge | 28 nC | 53 nC | 46 nC | 55 nC |
| Input Type | Standard | Standard | Standard | Standard |
| Power Max | 30 W | 32 W | 24 W | 32 W |
| Reverse Recovery Time Trr | 96 ns | 31 ns | 136 ns | 31 ns |
| Switching Energy | 120µJ (on), 270µJ (off) | 81µJ (on), 125µJ (off) | 99µJ (on), 100µJ (off) | 165µJ (on), 255µJ (off) |
| Action |
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