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STMicroelectronics 2SD2012 BJTs

3A, 60V, NPN, Si, POWER TRANSISTOR, TO-220AB, TO-220F, 3 PIN

50STMicroelectronicsTO-220-3 Full Pack$0.55
2SD2012 TO-220-3 Full Pack package illustration

Same model may have multiple batches, images only for reference.

2SD2012
Manufacturer
Part Number (MPN)
2SD2012
Detailed Description
3A, 60V, NPN, Si, POWER TRANSISTOR, TO-220AB, TO-220F, 3 PIN
Package
TO-220-3 Full Pack
Lifecycle Status
Obsolete
Datasheet
PDF 2SD2012 Datasheet
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Technical Specifications

STMicroelectronics 2SD2012 BJTs technical specifications.

General

Series
2SD2012
RoHS
Yes
Package / Case
TO-220-3 Full Pack
Mounting Type
Through Hole
Operating Temperature
150°C (TJ)
Lifecycle Status
Obsolete
Dc Current Gain Hfe Min IC Vce
100 @ 500mA, 5V
Power Max
25 W
Frequency Transition
3MHz
Transistor Type
NPN

Alternate Parts Comparison (2SD2012 vs MJE3055T vs TIP31A vs ST13003)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Operating Temperature150°C (TJ)150°C (TJ)150°C (TJ)-65 °C ~ 150 °C
RoHSYesCompliantCompliantCompliant
Lifecycle StatusObsoleteProductionProductionProduction
Collector Base Voltage Vcbo60 V70 V60 V700 V
Collector Emitter Saturation Voltage400 mV8 V1.2 V3 V
Emitter Base Voltage Vebo7 V5 V5 V9 V
PackageTO-220F-3TO-220TO-220SOT-32
Package / CaseTO-220-3 Full PackTO-220-3TO-220-3--
Current Collector Cutoff Max100µA (ICBO)700µA300µA--
Current Collector IC Max3 A10 A3 A--
Dc Current Gain Hfe Min IC Vce100 @ 500mA, 5V20 @ 4A, 4V10 @ 3A, 4V--
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More Parts in BJTs

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