STMicroelectronics BUL1102EFP BJTs
High voltage fast switching NPN power transistor
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
BUL1102EFP
Detailed Description
High voltage fast switching NPN power transistor
Package
TO-220-3 Full Pack
Lifecycle Status
Active
Datasheet
BUL1102EFP Datasheet
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Technical Specifications
STMicroelectronics BUL1102EFP BJTs technical specifications.
General
Package / Case
TO-220-3 Full Pack
Mounting Type
Through Hole
Operating Temperature
150°C (TJ)
Lifecycle Status
Active
Current Collector Cutoff Max
100µA
Dc Current Gain Hfe Min IC Vce
12 @ 2A, 5V
Power Max
30 W
Transistor Type
NPN
Current Collector IC Max
4 A
Voltage Collector Emitter Breakdown Max
450 V
Alternate Parts Comparison (BUL1102EFP vs STGF10M65DF2 vs STGF20M65DF2 vs STGF30M65DF2)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-220-3 Full Pack |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Operating Temperature | 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Lifecycle Status | Active | Active | Active | Active |
| Current Collector IC Max | 4 A | 20 A | 40 A | 60 A |
| Description | -- | -- | -- | -- |
| Detailed Description | -- | -- | -- | -- |
| Power Max | 30 W | 30 W | 32.6 W | 38 W |
| Voltage Collector Emitter Breakdown Max | 450 V | 650 V | 650 V | 650 V |
| Series | -- | M | M | M |
| Current Collector Pulsed Icm | -- | 40 A | 80 A | 120 A |
| Gate Charge | -- | 28 nC | 63 nC | 80 nC |
| Action |
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