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STMicroelectronics STGF10H60DF BJTs

Trans IGBT Chip N-CH 600V 20A 30000mW 3-Pin(3+Tab) TO-220FP Tube

35 ActiveSTMicroelectronicsTO-220-3 Full Pack$2.11
STGF10H60DF - No Image Available

Same model may have multiple batches, images only for reference.

STGF10H60DF
Manufacturer
Part Number (MPN)
STGF10H60DF
Detailed Description
Trans IGBT Chip N-CH 600V 20A 30000mW 3-Pin(3+Tab) TO-220FP Tube
Package
TO-220-3 Full Pack
Lifecycle Status
Active
Datasheet
PDF STGF10H60DF Datasheet
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Technical Specifications

STMicroelectronics STGF10H60DF BJTs technical specifications.

General

Package / Case
TO-220-3 Full Pack
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 175°C (TJ)
Lifecycle Status
Active
Input Type
Standard
Gate Charge
57 nC
Td on Off 25 C
19.5ns/103ns
Test Condition
400V, 10A, 10Ohm, 15V
Igbt Type
Trench Field Stop
Reverse Recovery Time Trr
107 ns

Alternate Parts Comparison (STGF10H60DF vs STGF19NC60WD vs STGF19NC60KD vs STGF14NC60KD)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-220-3 Full PackTO-220-3 Full PackTO-220-3 Full PackTO-220-3 Full Pack
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Lifecycle StatusActiveObsoleteActiveActive
Current Collector IC Max20 A14 A16 A11 A
Description--------
Detailed Description--------
Gate Charge57 nC53 nC55 nC34.4 nC
Input TypeStandardStandardStandardStandard
Power Max30 W32 W32 W28 W
Reverse Recovery Time Trr107 ns31 ns31 ns37 ns
Switching Energy83µJ (on), 140µJ (off)81µJ (on), 125µJ (off)165µJ (on), 255µJ (off)82µJ (on), 155µJ (off)
Action

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