STMicroelectronics STGB40H65FB BJTs
Trench gate field-stop 650 V, 40 A high speed HB series IGBT
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
STGB40H65FB
Detailed Description
Trench gate field-stop 650 V, 40 A high speed HB series IGBT
Package
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Lifecycle Status
Active
Datasheet
STGB40H65FB Datasheet
Quick Jump:
Technical Specifications
STMicroelectronics STGB40H65FB BJTs technical specifications.
General
Series
HB
Package / Case
TO-263-3, D2PAK
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Lifecycle Status
Active
Switching Energy
498µJ (on), 363µJ (off)
Input Type
Standard
Gate Charge
210 nC
Td on Off 25 C
40ns/142ns
Test Condition
400V, 40A, 5Ohm, 15V
Alternate Parts Comparison (STGB40H65FB vs STGB30H60DFB vs STGB14NC60KDT4 vs STGB15H60DF)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-263-3, D2PAK | TO-263-3, D2PAK | TO-263-3, D2PAK | TO-263-3, D2PAK |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) |
| Lifecycle Status | Active | Active | Active | Active |
| Current Collector IC Max | 80 A | 60 A | 25 A | 30 A |
| Current Collector Pulsed Icm | 160 A | 120 A | 50 A | 60 A |
| Gate Charge | 210 nC | 149 nC | 34.4 nC | 81 nC |
| Input Type | Standard | Standard | Standard | Standard |
| Power Max | 283 W | 260 W | 80 W | 115 W |
| Switching Energy | 498µJ (on), 363µJ (off) | 383µJ (on), 293µJ (off) | 82µJ (on), 155µJ (off) | 136µJ (on), 207µJ (off) |
| Td on Off 25 C | 40ns/142ns | 37ns/146ns | 22.5ns/116ns | 24.5ns/118ns |
| Test Condition | 400V, 40A, 5Ohm, 15V | 400V, 30A, 10Ohm, 15V | 390V, 7A, 10Ohm, 15V | 400V, 15A, 10Ohm, 15V |
| Action |
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