STMicroelectronics STGB3NC120HDT4 BJTs
7 A, 1200 V very fast IGBT with ultrafast diode
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
STGB3NC120HDT4
Detailed Description
7 A, 1200 V very fast IGBT with ultrafast diode
Package
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Lifecycle Status
Active
Datasheet
STGB3NC120HDT4 Datasheet
Quick Jump:
Technical Specifications
STMicroelectronics STGB3NC120HDT4 BJTs technical specifications.
General
Series
PowerMESH™
RoHS
Yes
Package / Case
TO-263-3, D2PAK
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Input Type
Standard
Gate Charge
24 nC
Td on Off 25 C
15ns/118ns
Test Condition
800V, 3A, 10Ohm, 15V
Alternate Parts Comparison (STGB3NC120HDT4 vs STGB30H60DFB vs STGB15H60DF vs STGB10M65DF2)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-263-3, D2PAK | TO-263-3, D2PAK | TO-263-3, D2PAK | TO-263-3, D2PAK |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Lifecycle Status | Active | Active | Active | Active |
| Current Collector IC Max | 14 A | 60 A | 30 A | 20 A |
| Current Collector Pulsed Icm | 20 A | 120 A | 60 A | 40 A |
| Gate Charge | 24 nC | 149 nC | 81 nC | 28 nC |
| Input Type | Standard | Standard | Standard | Standard |
| Power Max | 75 W | 260 W | 115 W | 115 W |
| Reverse Recovery Time Trr | 51 ns | 53 ns | 103 ns | 96 ns |
| Switching Energy | 236µJ (on), 290µJ (off) | 383µJ (on), 293µJ (off) | 136µJ (on), 207µJ (off) | 120µJ (on), 270µJ (off) |
| Td on Off 25 C | 15ns/118ns | 37ns/146ns | 24.5ns/118ns | 19ns/91ns |
| Action |
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