STMicroelectronics STGB19NC60KDT4 BJTs
20 A, 600 V short circuit rugged IGBT
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
STGB19NC60KDT4
Base Model
Detailed Description
20 A, 600 V short circuit rugged IGBT
Package
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Lifecycle Status
Active
Datasheet
STGB19NC60KDT4 Datasheet
Quick Jump:
Technical Specifications
STMicroelectronics STGB19NC60KDT4 BJTs technical specifications.
General
Series
PowerMESH™
RoHS
Yes
Package / Case
TO-263-3, D2PAK
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Input Type
Standard
Gate Charge
55 nC
Td on Off 25 C
30ns/105ns
Test Condition
480V, 12A, 10Ohm, 15V
Alternate Parts Comparison (STGB19NC60KDT4 vs STGB19NC60HDT4 vs STGB30H60DFB vs STGB15H60DF)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-263-3, D2PAK | TO-263-3, D2PAK | TO-263-3, D2PAK | TO-263-3, D2PAK |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Lifecycle Status | Active | Active | Active | Active |
| Current Collector IC Max | 35 A | 40 A | 60 A | 30 A |
| Current Collector Pulsed Icm | 75 A | 60 A | 120 A | 60 A |
| Gate Charge | 55 nC | 53 nC | 149 nC | 81 nC |
| Input Type | Standard | Standard | Standard | Standard |
| Power Max | 125 W | 130 W | 260 W | 115 W |
| Reverse Recovery Time Trr | 31 ns | 31 ns | 53 ns | 103 ns |
| Switching Energy | 165µJ (on), 255µJ (off) | 85µJ (on), 189µJ (off) | 383µJ (on), 293µJ (off) | 136µJ (on), 207µJ (off) |
| Td on Off 25 C | 30ns/105ns | 25ns/97ns | 37ns/146ns | 24.5ns/118ns |
| Action |
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