STMicroelectronics STGB30M65DF2 BJTs
Trench gate field-stop IGBT M series, 650 V 30 A low loss
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
STGB30M65DF2
Detailed Description
Trench gate field-stop IGBT M series, 650 V 30 A low loss
Package
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Lifecycle Status
Active
Datasheet
STGB30M65DF2 Datasheet
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Technical Specifications
STMicroelectronics STGB30M65DF2 BJTs technical specifications.
General
Package / Case
TO-263-3, D2PAK
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Lifecycle Status
Active
Input Type
Standard
Gate Charge
80 nC
Td on Off 25 C
31.6ns/115ns
Test Condition
400V, 30A, 10Ohm, 15V
Igbt Type
Trench Field Stop
Reverse Recovery Time Trr
140 ns
Alternate Parts Comparison (STGB30M65DF2 vs STGB20NB41LZT4 vs STGB10NB37LZT4 vs STGB14NC60KDT4)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-263-3, D2PAK | TO-263-3, D2PAK | TO-263-3, D2PAK | TO-263-3, D2PAK |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -65°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) |
| Lifecycle Status | Active | Active | Active | Active |
| Current Collector IC Max | 60 A | 40 A | 20 A | 25 A |
| Current Collector Pulsed Icm | 120 A | 80 A | 40 A | 50 A |
| Gate Charge | 80 nC | 46 nC | 28 nC | 34.4 nC |
| Input Type | Standard | Standard | Standard | Standard |
| Power Max | 258 W | 200 W | 125 W | 80 W |
| Switching Energy | 300µJ (on), 960µJ (off) | 5mJ (on), 12.9mJ (off) | 2.4mJ (on), 5mJ (off) | 82µJ (on), 155µJ (off) |
| Td on Off 25 C | 31.6ns/115ns | 1µs/12.1µs | 1.3µs/8µs | 22.5ns/116ns |
| Test Condition | 400V, 30A, 10Ohm, 15V | 320V, 20A, 1kOhm, 5V | 328V, 10A, 1kOhm, 5V | 390V, 7A, 10Ohm, 15V |
| Action |
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