STMicroelectronics STGB10H60DF BJTs
Trench gate field-stop IGBT, H series 600 V, 10 A high speed
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
STGB10H60DF
Detailed Description
Trench gate field-stop IGBT, H series 600 V, 10 A high speed
Package
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Lifecycle Status
Active
Datasheet
STGB10H60DF Datasheet
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Technical Specifications
STMicroelectronics STGB10H60DF BJTs technical specifications.
General
Package / Case
TO-263-3, D2PAK
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Lifecycle Status
Active
Input Type
Standard
Gate Charge
57 nC
Td on Off 25 C
19.5ns/103ns
Test Condition
400V, 10A, 10Ohm, 15V
Igbt Type
Trench Field Stop
Reverse Recovery Time Trr
107 ns
Alternate Parts Comparison (STGB10H60DF vs STGB20NB41LZT4 vs STGB10NB37LZT4 vs STGB14NC60KDT4)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-263-3, D2PAK | TO-263-3, D2PAK | TO-263-3, D2PAK | TO-263-3, D2PAK |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -65°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) |
| Lifecycle Status | Active | Active | Active | Active |
| Current Collector IC Max | 20 A | 40 A | 20 A | 25 A |
| Current Collector Pulsed Icm | 40 A | 80 A | 40 A | 50 A |
| Description | -- | -- | -- | -- |
| Detailed Description | -- | -- | -- | -- |
| Gate Charge | 57 nC | 46 nC | 28 nC | 34.4 nC |
| Input Type | Standard | Standard | Standard | Standard |
| Power Max | 115 W | 200 W | 125 W | 80 W |
| Switching Energy | 83µJ (on), 140µJ (off) | 5mJ (on), 12.9mJ (off) | 2.4mJ (on), 5mJ (off) | 82µJ (on), 155µJ (off) |
| Action |
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