STMicroelectronics STD12N60M2 MOSFETs
N-channel 600 V, 0.395 Ohm typ., 9 A MDmesh M2 Power MOSFET in DPAK package
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
STD12N60M2
Base Model
Detailed Description
N-channel 600 V, 0.395 Ohm typ., 9 A MDmesh M2 Power MOSFET in DPAK package
Package
DPAK
Lifecycle Status
Active
Datasheet
STD12N60M2 Datasheet
Quick Jump:
Technical Specifications
STMicroelectronics STD12N60M2 MOSFETs technical specifications.
General
Series
MDmesh™ M2
Package / Case
TO-252-3, DPAK
Mounting Type
Surface Mount
Operating Temperature
150°C (TJ)
Lifecycle Status
Active
Vgs Th Max ID
4V @ 250µA
Gate Charge Qg Max Vgs
16 nC @ 10 V
Vgs Max
±25V
Input Capacitance Ciss Max Vds
538 pF @ 100 V
Power Dissipation Max
85W (Tc)
Alternate Parts Comparison (STD12N60M2 vs STD12N60DM6 vs STD12N60DM2AG vs STDRIVE601TR)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-252-3, DPAK | TO-252-3, DPAK | TO-252-3, DPAK | 28-SOIC |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -40°C ~ 125°C (TJ) |
| Lifecycle Status | Active | Active | Active | Active |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | Power MOSFET, IGBT |
| Series | MDmesh™ M2 | MDmesh™ | MDmesh™ DM2 | -- |
| Current Continuous Drain ID 25 C | 9A (Tc) | 10A (Tc) | 10A (Tc) | -- |
| Drain to Source Voltage Vdss | 600 V | 600 V | 600 V | -- |
| Fet Type | N-Channel | N-Channel | N-Channel | -- |
| Gate Charge Qg Max Vgs | 16 nC @ 10 V | 17 nC @ 10 V | 14.5 nC @ 10 V | -- |
| Input Capacitance Ciss Max Vds | 538 pF @ 100 V | 508 pF @ 100 V | 614 pF @ 100 V | -- |
| Power Dissipation Max | 85W (Tc) | 90W (Tc) | 110W (Tc) | -- |
| Action |
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