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STMicroelectronics STD2LN60K3 MOSFETs

N-channel 600 V, 4 Ohm typ., 2 A, SuperMESH3(TM) Power MOSFET in DPAK package

22,500 ActiveSTMicroelectronicsDPAK$0.52
STD2LN60K3 DPAK package illustration

Same model may have multiple batches, images only for reference.

STD2LN60K3
Manufacturer
Part Number (MPN)
STD2LN60K3
Detailed Description
N-channel 600 V, 4 Ohm typ., 2 A, SuperMESH3(TM) Power MOSFET in DPAK package
Package
DPAK
Lifecycle Status
Active
Datasheet
PDF STD2LN60K3 Datasheet
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Technical Specifications

STMicroelectronics STD2LN60K3 MOSFETs technical specifications.

General

Series
SuperMESH3™
Package / Case
TO-252-3, DPAK
Mounting Type
Surface Mount
Operating Temperature
150°C (TJ)
Lifecycle Status
Active
Vgs Th Max ID
4.5V @ 50µA
Gate Charge Qg Max Vgs
12 nC @ 10 V
Vgs Max
±30V
Input Capacitance Ciss Max Vds
235 pF @ 50 V
Power Dissipation Max
45W (Tc)

Related Parts Comparison (STD2LN60K3 vs STD80N6F7 vs STD9N80K5 vs STDRIVE601TR)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
Package / CaseTO-252-3, DPAKTO-252-3, DPAKTO-252-3, DPAK28-SOIC
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature150°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 150°C (TJ)-40°C ~ 125°C (TJ)
Lifecycle StatusActiveActiveActiveActive
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)Power MOSFET, IGBT
SeriesSuperMESH3™STripFET™ F7MDmesh™ K5--
Current Continuous Drain ID 25 C2A (Tc)40A (Tc)7A (Tc)--
Drain to Source Voltage Vdss600 V60 V800 V--
Drive Voltage Max Rds on Min Rds on10V10V10V--
Fet TypeN-ChannelN-ChannelN-Channel--
Gate Charge Qg Max Vgs12 nC @ 10 V25 nC @ 10 V12 nC @ 10 V--
Input Capacitance Ciss Max Vds235 pF @ 50 V1600 pF @ 30 V340 pF @ 100 V--
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