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STMicroelectronics STD2LN60K3 MOSFETs

N-channel 600 V, 4 Ohm typ., 2 A, SuperMESH3(TM) Power MOSFET in DPAK package

22,500 ActiveSTMicroelectronicsDPAK$0.52
STD2LN60K3 DPAK package illustration

Same model may have multiple batches, images only for reference.

STD2LN60K3
Manufacturer
Part Number (MPN)
STD2LN60K3
Detailed Description
N-channel 600 V, 4 Ohm typ., 2 A, SuperMESH3(TM) Power MOSFET in DPAK package
Package
DPAK
Lifecycle Status
Active
Datasheet
PDF STD2LN60K3 Datasheet
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Technical Specifications

STMicroelectronics STD2LN60K3 MOSFETs technical specifications.

General

Series
SuperMESH3™
Package / Case
TO-252-3, DPAK
Mounting Type
Surface Mount
Operating Temperature
150°C (TJ)
Lifecycle Status
Active
Vgs Th Max ID
4.5V @ 50µA
Gate Charge Qg Max Vgs
12 nC @ 10 V
Vgs Max
±30V
Input Capacitance Ciss Max Vds
235 pF @ 50 V
Power Dissipation Max
45W (Tc)

Alternate Parts Comparison (STD2LN60K3 vs STD80N6F7 vs STD9N80K5 vs STDRIVE601TR)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-252-3, DPAKTO-252-3, DPAKTO-252-3, DPAK28-SOIC
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature150°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 150°C (TJ)-40°C ~ 125°C (TJ)
Lifecycle StatusActiveActiveActiveActive
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)Power MOSFET, IGBT
SeriesSuperMESH3™STripFET™ F7MDmesh™ K5--
Current Continuous Drain ID 25 C2A (Tc)40A (Tc)7A (Tc)--
Drain to Source Voltage Vdss600 V60 V800 V--
Drive Voltage Max Rds on Min Rds on10V10V10V--
Fet TypeN-ChannelN-ChannelN-Channel--
Gate Charge Qg Max Vgs12 nC @ 10 V25 nC @ 10 V12 nC @ 10 V--
Input Capacitance Ciss Max Vds235 pF @ 50 V1600 pF @ 30 V340 pF @ 100 V--
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