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STMicroelectronics STD12N60DM6 MOSFETs

MOSFET N-CH 600V 10A DPAK

2,500 ActiveSTMicroelectronicsSTD12NTO-252 (DPAK)$2.00
STD12N60DM6 TO-252 (DPAK) package illustration

Same model may have multiple batches, images only for reference.

STD12N60DM6
Manufacturer
Part Number (MPN)
STD12N60DM6
Base Model
Detailed Description
MOSFET N-CH 600V 10A DPAK
Package
TO-252 (DPAK)
Lifecycle Status
Active
Datasheet
PDF STD12N60DM6 Datasheet
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Ordering Code Family

STD12N groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

3 ordering variants listed on the family page.

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Technical Specifications

STMicroelectronics STD12N60DM6 MOSFETs technical specifications.

General

Series
MDmesh™
Package / Case
TO-252-3, DPAK
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Vgs Th Max ID
4.75V @ 250µA
Gate Charge Qg Max Vgs
17 nC @ 10 V
Vgs Max
±25V
Input Capacitance Ciss Max Vds
508 pF @ 100 V
Power Dissipation Max
90W (Tc)

Alternate Parts Comparison (STD12N60DM6 vs STD12N60M2 vs STD12N60DM2AG vs STDRIVE601TR)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-252-3, DPAKTO-252-3, DPAKTO-252-3, DPAK28-SOIC
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)150°C (TJ)-55°C ~ 150°C (TJ)-40°C ~ 125°C (TJ)
Lifecycle StatusActiveActiveActiveActive
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)Power MOSFET, IGBT
SeriesMDmesh™MDmesh™ M2MDmesh™ DM2--
Current Continuous Drain ID 25 C10A (Tc)9A (Tc)10A (Tc)--
Drain to Source Voltage Vdss600 V600 V600 V--
Fet TypeN-ChannelN-ChannelN-Channel--
Gate Charge Qg Max Vgs17 nC @ 10 V16 nC @ 10 V14.5 nC @ 10 V--
Input Capacitance Ciss Max Vds508 pF @ 100 V538 pF @ 100 V614 pF @ 100 V--
Power Dissipation Max90W (Tc)85W (Tc)110W (Tc)--
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