STMicroelectronics STD155N3LH6 MOSFETs

Name: STD155N3LH6
Brand: STMicroelectronics
SKU: STD155N3LH6
Price: 5.6235 USD
Availability: InStock

N-Ch 30V 80A 3mR Power MOSFET DPAK

100STMicroelectronicsTO-252 (DPAK)$5.62

Same model may have multiple batches, images only for reference.

STD155N3LH6

Manufacturer

STMicroelectronics

Part Number (MPN)

STD155N3LH6

Technical Specifications

STMicroelectronics STD155N3LH6 MOSFETs technical specifications.

General

Series

DeepGATE™, STripFET™ VI

Package / Case

TO-252-3, DPAK

Mounting Type

Surface Mount

Operating Temperature

-55°C ~ 175°C (TJ)

Lifecycle Status

Last Time Buy

Vgs Th Max ID

2.5V @ 250µA

Gate Charge Qg Max Vgs

80 nC @ 5 V

Vgs Max

±20V

Input Capacitance Ciss Max Vds

3800 pF @ 25 V

Power Dissipation Max

110W (Tc)

Alternate Parts Comparison (STD155N3LH6 vs STD80N6F7 vs STD9N80K5 vs STDRIVE601TR)

Side-by-side technical parameter comparison of related primary models in this product family.

	This Part	Alternate Parts	Alternate Parts	Alternate Parts
	STMicroelectronicsSTD155N3LH6	STMicroelectronicsSTD80N6F7	STMicroelectronicsSTD9N80K5	STMicroelectronicsSTDRIVE601TR
Package / Case	TO-252-3, DPAK	TO-252-3, DPAK	TO-252-3, DPAK	28-SOIC
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Operating Temperature	-55°C ~ 175°C (TJ)	-55°C ~ 175°C (TJ)	-55°C ~ 150°C (TJ)	-40°C ~ 125°C (TJ)
Lifecycle Status	Last Time Buy	Active	Active	Active
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	Power MOSFET, IGBT
Series	DeepGATE™, STripFET™ VI	STripFET™ F7	MDmesh™ K5	--
Current Continuous Drain ID 25 C	80A (Tc)	40A (Tc)	7A (Tc)	--
Drain to Source Voltage Vdss	30 V	60 V	800 V	--
Drive Voltage Max Rds on Min Rds on	5V, 10V	10V	10V	--
Fet Type	N-Channel	N-Channel	N-Channel	--
Gate Charge Qg Max Vgs	80 nC @ 5 V	25 nC @ 10 V	12 nC @ 10 V	--
Input Capacitance Ciss Max Vds	3800 pF @ 25 V	1600 pF @ 30 V	340 pF @ 100 V	--
Action	RFQ	RFQ	RFQ	RFQ

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