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STMicroelectronics STB18N60M6 MOSFETs

N-channel 600 V, 230 mOhm typ., 13 A MDmesh M6 Power MOSFET in a D2PAK package

1,000 ActiveSTMicroelectronicsSTB18NTO-263 (D2PAK)$2.95
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STB18N60M6
Manufacturer
Part Number (MPN)
STB18N60M6
Base Model
Detailed Description
N-channel 600 V, 230 mOhm typ., 13 A MDmesh M6 Power MOSFET in a D2PAK package
Package
TO-263 (D2PAK)
Lifecycle Status
Active
Datasheet
PDF STB18N60M6 Datasheet
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Ordering Code Family

STB18N groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

4 ordering variants listed on the family page.

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Technical Specifications

STMicroelectronics STB18N60M6 MOSFETs technical specifications.

General

Series
MDmesh™ M6
Package / Case
TO-263-3, D2PAK
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Vgs Th Max ID
4.75V @ 250µA
Gate Charge Qg Max Vgs
16.8 nC @ 10 V
Vgs Max
±25V
Input Capacitance Ciss Max Vds
650 pF @ 100 V
Power Dissipation Max
110W (Tc)

Alternate Parts Comparison (STB18N60M6 vs STB18NM80 vs STB18N65M5 vs STB18N60M2)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
SeriesMDmesh™ M6MDmesh™MDmesh™ VMDmesh™ II Plus
Package / CaseTO-263-3, D2PAKTO-263-3, D2PAKTO-263-3, D2PAKTO-263-3, D2PAK
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)150°C (TJ)150°C (TJ)-55°C ~ 150°C (TJ)
Lifecycle StatusActiveActiveActiveActive
Current Continuous Drain ID 25 C13A (Tc)17A (Tc)15A (Tc)13A (Tc)
Description--------
Detailed Description--------
Drain to Source Voltage Vdss600 V800 V650 V600 V
Drive Voltage Max Rds on Min Rds on10V10V10V10V
Fet TypeN-ChannelN-ChannelN-ChannelN-Channel
Gate Charge Qg Max Vgs16.8 nC @ 10 V70 nC @ 10 V31 nC @ 10 V21.5 nC @ 10 V
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