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STMicroelectronics STB18N60M2 MOSFETs

600V 13A N-CH MOSFET D2PAK, 255mR Rds(on)

50 ActiveSTMicroelectronicsSTB18ND2PAK$6.25
STB18N60M2 - No Image Available

Same model may have multiple batches, images only for reference.

STB18N60M2
Manufacturer
Part Number (MPN)
STB18N60M2
Base Model
Detailed Description
600V 13A N-CH MOSFET D2PAK, 255mR Rds(on)
Package
D2PAK
Lifecycle Status
Active
Datasheet
PDF STB18N60M2 Datasheet
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Ordering Code Family

STB18N groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

4 ordering variants listed on the family page.

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Technical Specifications

STMicroelectronics STB18N60M2 MOSFETs technical specifications.

General

Series
MDmesh™ II Plus
Package / Case
TO-263-3, D2PAK
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Vgs Th Max ID
4V @ 250µA
Gate Charge Qg Max Vgs
21.5 nC @ 10 V
Vgs Max
±25V
Input Capacitance Ciss Max Vds
791 pF @ 100 V
Power Dissipation Max
110W (Tc)

Alternate Parts Comparison (STB18N60M2 vs STB18NM80 vs STB18N60M6 vs STB18N65M5)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
SeriesMDmesh™ II PlusMDmesh™MDmesh™ M6MDmesh™ V
Package / CaseTO-263-3, D2PAKTO-263-3, D2PAKTO-263-3, D2PAKTO-263-3, D2PAK
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)150°C (TJ)-55°C ~ 150°C (TJ)150°C (TJ)
Lifecycle StatusActiveActiveActiveActive
Current Continuous Drain ID 25 C13A (Tc)17A (Tc)13A (Tc)15A (Tc)
Description--------
Detailed Description--------
Drain to Source Voltage Vdss600 V800 V600 V650 V
Drive Voltage Max Rds on Min Rds on10V10V10V10V
Fet TypeN-ChannelN-ChannelN-ChannelN-Channel
Gate Charge Qg Max Vgs21.5 nC @ 10 V70 nC @ 10 V16.8 nC @ 10 V31 nC @ 10 V
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