Samsung Semiconductor K4B1G1646G-BCMA DRAM
DDR DRAM, 64MX16, 0.195ns, CMOS, PBGA96
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
K4B1G1646G-BCMA
Detailed Description
DDR DRAM, 64MX16, 0.195ns, CMOS, PBGA96
Package
FBGA96
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
K4B1G1646G-BCMA Datasheet
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Technical Specifications
Samsung Semiconductor K4B1G1646G-BCMA DRAM technical specifications.
General
Interface
DDR DRAM
RoHS
Yes
Number of Pins
96
Supply Voltage
1.5
Terminal Position
BOTTOM
Jedec Package Code
R-PBGA-B96
Supply Current Max
0.195
Number of Words
67108864
Number of Words Code
64000000
Standby Current Max
0.01
Alternate Parts Comparison (K4B1G1646G-BCMA vs K4B2G1646Q-BCMA vs K4B2G0846D-HCH9 vs K4M561633G-BN75)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Compliant | Yes |
| Package | FBGA96 | FBGA | BGA | FBGA-54 |
| Supply Voltage | 1.5 | -- | 1.425 ~ 1.575 | 3 |
| Interface | DDR DRAM | -- | SSTL_1.5 | SYNCHRONOUS DRAM |
| Number of Pins | 96 | -- | 78 | 54 |
| Memory Organization | 64MX16 | -- | 256Mx8 | 16MX16 |
| Action |
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