Samsung Semiconductor K4B1G1646G-BCMA DRAM
DDR DRAM, 64MX16, 0.195ns, CMOS, PBGA96
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
K4B1G1646G-BCMA
Detailed Description
DDR DRAM, 64MX16, 0.195ns, CMOS, PBGA96
Package
FBGA96
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
K4B1G1646G-BCMA Datasheet
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Technical Specifications
Samsung Semiconductor K4B1G1646G-BCMA DRAM technical specifications.
General
RoHS
Yes
Number of Pins
96
Terminal Position
BOTTOM
Jedec Package Code
R-PBGA-B96
Supply Voltage Nom Vsup
1.5
Supply Current Max
0.195
Number of Words
67108864
Number of Words Code
64000000
Memory IC Type
DDR DRAM
Standby Current Max
0.01
Alternate Parts Comparison (K4B1G1646G-BCMA vs K4B2G1646Q-BCMA vs K4B2G0846D-HCH9 vs K4M561633G-BN75)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Number of Pins | 96 | -- | 78 | 54 |
| RoHS | Yes | True | Compliant | Yes |
| Access Time Max | 0.195 | -- | -- | 5.4 |
| Clock Frequency Max Fclk | 933 | -- | -- | 133 |
| IO Type | COMMON | -- | -- | COMMON |
| Jedec Package Code | R-PBGA-B96 | -- | -- | R-PBGA-B54 |
| Lead Free | Yes | -- | -- | Yes |
| Memory IC Type | DDR DRAM | -- | -- | SYNCHRONOUS DRAM |
| Military Spec | False | -- | -- | False |
| Number of Words | 67108864 | -- | -- | 16777216 |
| Number of Words Code | 64000000 | -- | -- | 16000000 |
| Standby Current Max | 0.01 | -- | -- | 0.001 |
| Action |
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