ROHM RT1A050ZPTR MOSFETs
MOSFET P-CH 12V 5A 8TSST
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
RT1A050ZPTR
Detailed Description
MOSFET P-CH 12V 5A 8TSST
Package
8-TSST
Lifecycle Status
Active
Datasheet
RT1A050ZPTR Datasheet
Quick Jump:
Technical Specifications
ROHM RT1A050ZPTR MOSFETs technical specifications.
General
Series
RT1A050ZP
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
P-Channel
Vds Drain Source Breakdown Voltage
12 V
ID Continuous Drain Current
5 A
Rds on Drain Source Resistance
26 mOhms
Alternate Parts Comparison (RT1A050ZPTR vs RT1E050RPTR vs RTU002P02T106 vs RUM002N02T2L)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | SMD/SMT | Surface Mount | Surface Mount |
| Operating Temperature | - 55°C ~ + 150°C | - 55°C ~ + 150°C | 150°C (TJ) | -55 °C ~ 150 °C |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel | 1 Channel |
| RoHS | Yes | Yes | ROHS3 Compliant | Compliant |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Configuration | Single | Single | Single | Single |
| Fall Time | 220 ns | 50 ns | 6 ns | 10 ns |
| Package | 8-TSST | 8-TSST | Tape & Reel (TR) | SOT-23 |
| Pd Power Dissipation | 1.25 W | 1.25 W | 200 mW | 150 mW |
| Rds on Drain Source Resistance | 26 mOhms | 26 mOhms | 2 Ohms | 1.2 Ohms |
| Rise Time | 95 ns | 15 ns | 6 ns | 10 ns |
| Technology | Si | Si | MOSFET (Metal Oxide) | Si |
| Action |
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