ROHM QS6J1TR MOSFETs
MOSFET 2P-CH 20V 1.5A TSMT6
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
QS6J1TR
Detailed Description
MOSFET 2P-CH 20V 1.5A TSMT6
Package
SOT-23-6Thin,TSOT-23-6
Lifecycle Status
Active
Datasheet
QS6J1TR Datasheet
Quick Jump:
Technical Specifications
ROHM QS6J1TR MOSFETs technical specifications.
General
Series
QS6J1
RoHS
Yes
Number of Channels
2 Channel
Mounting Type
SMD/SMT
Technology
Si
Transistor Polarity
P-Channel
Vds Drain Source Breakdown Voltage
20 V
ID Continuous Drain Current
1.5 A
Rds on Drain Source Resistance
310 mOhms
Vgs Gate Source Voltage
- 12 V, + 12 V
Alternate Parts Comparison (QS6J1TR vs QS6M3TR vs QS5K2TR vs QS8M31TR)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | -- | -- | SMD/SMT |
| Number of Channels | 2 Channel | -- | -- | 2 Channel |
| RoHS | Yes | -- | -- | Yes |
| Channel Mode | Enhancement | -- | -- | Enhancement |
| Configuration | Dual | -- | -- | Dual |
| Fall Time | 12 ns | -- | -- | 7 ns, 10 ns |
| ID Continuous Drain Current | 1.5 A | -- | -- | 3 A, 2 A |
| Package | SOT-23-6Thin,TSOT-23-6 | -- | -- | TSMT8 |
| Pd Power Dissipation | 1.25 W | -- | -- | 1.5 W |
| Qg Gate Charge | 3 nC | -- | -- | 4 nC, 7.2 nC |
| Rds on Drain Source Resistance | 310 mOhms | -- | -- | 112 mOhms, 210 mOhms |
| Rise Time | 12 ns | -- | -- | 15 ns, 12 ns |
| Action |
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