ROHM QS6J1TR MOSFETs
MOSFET 2P-CH 20V 1.5A TSMT6
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
QS6J1TR
Detailed Description
MOSFET 2P-CH 20V 1.5A TSMT6
Package
SOT-23-6Thin,TSOT-23-6
Lifecycle Status
Active
Datasheet
QS6J1TR Datasheet
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Technical Specifications
ROHM QS6J1TR MOSFETs technical specifications.
General
Series
QS6J1
RoHS
Yes
Number of Channels
2 Channel
Mounting Type
SMD/SMT
Technology
Si
Transistor Polarity
P-Channel
Vds Drain Source Breakdown Voltage
20 V
ID Continuous Drain Current
1.5 A
Rds on Drain Source Resistance
310 mOhms
Vgs Gate Source Voltage
- 12 V, + 12 V
Related Parts Comparison (QS6J1TR vs QS6M3TR vs QS5K2TR vs QS8M31TR)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | Surface Mount | Surface Mount | SMD/SMT |
| Number of Channels | 2 Channel | 2 Channel | 2 Channel | 2 Channel |
| RoHS | Yes | ROHS3 Compliant | Compliant | Yes |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Configuration | Dual | N and P-Channel | 2 N-Channel (Dual) Common Source | Dual |
| Fall Time | 12 ns | 18 ns, 12 ns | 8 ns | 7 ns, 10 ns |
| Package | SOT-23-6Thin,TSOT-23-6 | Tape & Reel (TR) | Tape & Reel (TR) | TSMT8 |
| Pd Power Dissipation | 1.25 W | 1.25 W | 1.25 W | 1.5 W |
| Qg Gate Charge | 3 nC | 1.6 nC | 2.8 nC | 4 nC, 7.2 nC |
| Rds on Drain Source Resistance | 310 mOhms | 260 mOhms | 100 mOhms | 112 mOhms, 210 mOhms |
| Rise Time | 12 ns | 18 ns, 12 ns | 10 ns | 15 ns, 12 ns |
| Technology | Si | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | Si |
| Action |
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