ROHM RQ5E025SPTL MOSFETs
MOSFET P-CH 30V 2.5A TSMT3
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
RQ5E025SPTL
Base Model
Detailed Description
MOSFET P-CH 30V 2.5A TSMT3
Package
SOT-346T-3
Lifecycle Status
Active
Datasheet
RQ5E025SPTL Datasheet
Quick Jump:
Technical Specifications
ROHM RQ5E025SPTL MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
P-Channel
Vds Drain Source Breakdown Voltage
30 V
ID Continuous Drain Current
2.5 A
Rds on Drain Source Resistance
98 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V
Alternate Parts Comparison (RQ5E025SPTL vs RQ5E025SNTL vs RQ5L015SPTL vs RQ3E120GNTB)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | SMD/SMT | SMD/SMT | SMD/SMT |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel | 1 Channel |
| RoHS | Yes | Yes | Yes | Yes |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Configuration | Single | Single | Single | Single |
| Fall Time | 10 ns | 5 ns | 10 ns | 3.4 ns |
| ID Continuous Drain Current | 2.5 A | 2.5 A | 1.5 A | 12 A |
| Package | SOT-346T-3 | SOT-346-3 | SC-96 | 8-PowerVDFN |
| Pd Power Dissipation | 1 W | 1 W | 1 W | 2 W |
| Qg Gate Charge | 5.4 nC | 2.9 nC | 10 nC | 10 nC |
| Rds on Drain Source Resistance | 98 mOhms | 70 mOhms | 360 mOhms | 8.8 mOhms |
| Rise Time | 10 ns | 10 ns | 10 ns | 4.5 ns |
| Action |
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