ROHM RTR025P02TL MOSFETs
MOSFET P-CH 20V 2.5A TSMT3
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
RTR025P02TL
Detailed Description
MOSFET P-CH 20V 2.5A TSMT3
Package
SOT-346T-3
Lifecycle Status
Active
Datasheet
RTR025P02TL Datasheet
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Technical Specifications
ROHM RTR025P02TL MOSFETs technical specifications.
General
Series
RTR025P02
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Technology
Si
Transistor Polarity
P-Channel
Vds Drain Source Breakdown Voltage
20 V
ID Continuous Drain Current
2.5 A
Rds on Drain Source Resistance
115 mOhms
Vgs Gate Source Voltage
- 12 V, + 12 V
Related Parts Comparison (RTR025P02TL vs RTR040N03HZGTL vs RTR030N05TL vs RTR025N03HZGTL)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | SMD/SMT | SMD/SMT | SMD/SMT |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel | 1 Channel |
| RoHS | Yes | Yes | Yes | Yes |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Configuration | Single | Single | Single | Single |
| ID Continuous Drain Current | 2.5 A | 4 A | 3 A | 2.5 A |
| Package | SOT-346T-3 | SC-96-3 | SOT-346T-3 | SC-96 |
| Pd Power Dissipation | 1 W | 1 W | 1 W | 1 W |
| Qg Gate Charge | 7 nC | 5.9 nC | 6.2 nC | 3.3 nC |
| Rds on Drain Source Resistance | 115 mOhms | 48 mOhms | 48 mOhms | 92 mOhms |
| Technology | Si | Si | Si | Si |
| Transistor Polarity | P-Channel | N-Channel | N-Channel | N-Channel |
| Action |
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