onsemi SSVMUN5312DW1T2G BJTs
Bipolar Transistors - Pre-Biased SS BRT COMPLEMENTARY
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SSVMUN5312DW1T2G
Detailed Description
Bipolar Transistors - Pre-Biased SS BRT COMPLEMENTARY
Package
6-TSSOP, SC-88, SOT-363
Lifecycle Status
Obsolete
Datasheet
SSVMUN5312DW1T2G Datasheet
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Technical Specifications
onsemi SSVMUN5312DW1T2G BJTs technical specifications.
General
Package / Case
6-TSSOP
Mounting Type
Surface Mount
Lifecycle Status
Obsolete
Vce Saturation Max Ib IC
250mV @ 300µA, 10mA
Current Collector Cutoff Max
500nA
Power Max
187mW
Grade
Automotive
Transistor Type
1 NPN, 1 PNP - Pre-Biased (Dual)
Qualification
AEC-Q101
Current Collector IC Max
100mA
Alternate Parts Comparison (SSVMUN5312DW1T2G vs MBT3906DW1T1G vs BC847CDW1T1G vs BC847CLT1G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Operating Temperature | -- | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Number of Pins | -- | 6 | 6 | 3 |
| RoHS | -- | Compliant | Compliant | Compliant |
| Lifecycle Status | Obsolete | Production | Production | Production |
| China ROHS | -- | Compliant | Compliant | Compliant |
| Collector Base Voltage Vcbo | -- | 40 V | 50 V | 50 V |
| Collector Emitter Breakdown Voltage | -- | 40 V | 45 V | 45 V |
| Collector Emitter Saturation Voltage | -- | -400 mV | 600 mV | 600 mV |
| Collector Emitter Voltage Vceo | -- | 40 V | 45 V | 45 V |
| Contact Plating | -- | Tin | Tin | Tin |
| Current Rating | -- | -200 mA | 100 mA | 100 mA |
| Element Configuration | -- | Dual | Dual | Single |
| Action |
More Parts in BJTs
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NSVMUN5316DW1T1Gonsemi100mA, 50V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, CASE 419B-02, 6 PIN