onsemi SMUN5313DW1T1G BJTs
Complementary Bipolar Digital Transistor (BRT), SC-88/SC70-6/SOT-363 6 LEAD, 3000-REEL
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SMUN5313DW1T1G
Base Model
Detailed Description
Complementary Bipolar Digital Transistor (BRT), SC-88/SC70-6/SOT-363 6 LEAD, 3000-REEL
Package
6-TSSOP, SC-88, SOT-363
Lifecycle Status
Active
Datasheet
SMUN5313DW1T1G Datasheet
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Technical Specifications
onsemi SMUN5313DW1T1G BJTs technical specifications.
General
Package / Case
6-TSSOP
Mounting Type
Surface Mount
Lifecycle Status
Active
Description
TRANS PREBIAS 1NPN 1PNP SOT-363
Detailed Description
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 187mW Surface Mount SC-88/SC70-6/SOT-363
Vce Saturation Max Ib IC
250mV @ 300µA, 10mA
Current Collector Cutoff Max
500nA
Power Max
187mW
Grade
Automotive
Transistor Type
1 NPN, 1 PNP - Pre-Biased (Dual)
Alternate Parts Comparison (SMUN5313DW1T1G vs SMUN5313DW1T3G vs SMUN5311DW1T1G vs SMUN2211T1G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Operating Temperature | -- | -- | -55 °C ~ 150 °C | -- |
| Number of Pins | -- | -- | 6 | -- |
| RoHS | -- | -- | Compliant | -- |
| Lifecycle Status | Active | Active | Active | Active |
| China ROHS | -- | -- | Compliant | -- |
| Collector Emitter Breakdown Voltage | -- | -- | 50 V | -- |
| Collector Emitter Voltage Vceo | -- | -- | 50 V | -- |
| Element Configuration | -- | -- | Dual | -- |
| Export Control Classification Number ECCN Code | -- | -- | EAR99 | -- |
| Halogen Free | -- | -- | Halogen Free | -- |
| Hfe Min | -- | -- | 35 | -- |
| Introduction Date | -- | -- | 1999-01-01 | -- |
| Action |
More Parts in BJTs
Browse additional parts from the same category, grouped by series, package type, and manufacturer. These are catalog suggestions — not verified pin-compatible alternates.
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