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onsemi SMUN5214DW1T1G BJTs

Dual NPN BJT 50V 100mA SOT-363 Digital Transistor

1,080,000 ActiveonsemiSOT-363$0.07
SMUN5214DW1T1G - No Image Available

Same model may have multiple batches, images only for reference.

SMUN5214DW1T1G
Manufacturer
Part Number (MPN)
SMUN5214DW1T1G
Detailed Description
Dual NPN BJT 50V 100mA SOT-363 Digital Transistor
Package
SOT-363
Lifecycle Status
Active
Datasheet
PDF SMUN5214DW1T1G Datasheet
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Technical Specifications

onsemi SMUN5214DW1T1G BJTs technical specifications.

General

Package / Case
6-TSSOP
Mounting Type
Surface Mount
Lifecycle Status
Active
Vce Saturation Max Ib IC
250mV @ 300µA, 10mA
Current Collector Cutoff Max
500nA
Power Max
187mW
Grade
Automotive
Transistor Type
2 NPN - Pre-Biased (Dual)
Qualification
AEC-Q101
Current Collector IC Max
100mA

Alternate Parts Comparison (SMUN5214DW1T1G vs SMUN5311DW1T1G vs SMUN2211T1G vs SMUN2213T1G)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Operating Temperature---55 °C ~ 150 °C----
Number of Pins--6----
RoHS--Compliant----
Lifecycle StatusActiveActiveActiveActive
China ROHS--Compliant----
Collector Emitter Breakdown Voltage--50 V----
Collector Emitter Voltage Vceo--50 V----
Element Configuration--Dual----
Export Control Classification Number ECCN Code--EAR99----
Halogen Free--Halogen Free----
Hfe Min--35----
Introduction Date--1999-01-01----
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