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onsemi UMZ1NT1G BJTs

NPN/PNP BJT Transistor, 50V, 200mA, 114MHz, SC-88/SC70-6

864,000 ActiveonsemiSC-88$0.06
UMZ1NT1G - No Image Available

Same model may have multiple batches, images only for reference.

UMZ1NT1G
Manufacturer
Part Number (MPN)
UMZ1NT1G
Detailed Description
NPN/PNP BJT Transistor, 50V, 200mA, 114MHz, SC-88/SC70-6
Package
SC-88
Lifecycle Status
Active
Datasheet
PDF UMZ1NT1G Datasheet
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Technical Specifications

onsemi UMZ1NT1G BJTs technical specifications.

General

Package / Case
6-TSSOP
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Description
TRANS NPN/PNP 50V 0.2A SC88/SC70
Detailed Description
Bipolar (BJT) Transistor Array 1 NPN, 1 PNP 50V 200mA 114MHz, 142MHz 250mW Surface Mount SC-88/SC70-6/SOT-363
Dc Current Gain Hfe Min IC Vce
200 @ 2mA, 6V
Power Max
250mW
Frequency Transition
114MHz, 142MHz
Transistor Type
1 NPN, 1 PNP

Alternate Parts Comparison (UMZ1NT1G vs MBT3906DW1T1G vs BC847CDW1T1G vs BC847CLT1G)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Number of Pins--663
RoHS--CompliantCompliantCompliant
Lifecycle StatusActiveActiveActiveActive
China ROHS--CompliantCompliantCompliant
Collector Base Voltage Vcbo--40 V50 V50 V
Collector Emitter Breakdown Voltage--40 V45 V45 V
Collector Emitter Saturation Voltage---400 mV600 mV600 mV
Collector Emitter Voltage Vceo--40 V45 V45 V
Contact Plating--TinTinTin
Current Rating---200 mA100 mA100 mA
Element Configuration--DualDualSingle
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