onsemi NSB1706DMW5T1G BJTs
Dual NPN BJT, 50V, 100mA, SOT-363
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
NSB1706DMW5T1G
Detailed Description
Dual NPN BJT, 50V, 100mA, SOT-363
Package
SOT-363
Lifecycle Status
Active
Datasheet
NSB1706DMW5T1G Datasheet
Quick Jump:
Technical Specifications
onsemi NSB1706DMW5T1G BJTs technical specifications.
General
Package / Case
5-TSSOP
Mounting Type
Surface Mount
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
80 @ 5mA, 10V
Vce Saturation Max Ib IC
250mV @ 1mA, 10mA
Current Collector Cutoff Max
500nA
Power Max
187mW
Transistor Type
2 NPN - Pre-Biased (Dual)
Current Collector IC Max
100mA
Voltage Collector Emitter Breakdown Max
50V
Alternate Parts Comparison (NSB1706DMW5T1G vs BC847BPDW1T3G vs SMUN5214DW1T1G vs NSVMUN5133DW1T1G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | 5-TSSOP | 6-TSSOP | 6-TSSOP | 6-TSSOP |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Lifecycle Status | Active | Active | Active | Active |
| Current Collector Cutoff Max | 500nA | 15nA (ICBO) | 500nA | 500nA |
| Current Collector IC Max | 100mA | 100mA | 100mA | 100mA |
| Dc Current Gain Hfe Min IC Vce | 80 @ 5mA, 10V | 200 @ 2mA, 5V | 80 @ 5mA, 10V | 80 @ 5mA, 10V |
| Power Max | 187mW | 380mW | 187mW | 250mW |
| Transistor Type | 2 NPN - Pre-Biased (Dual) | 1 NPN, 1 PNP | 2 NPN - Pre-Biased (Dual) | 2 PNP - Pre-Biased (Dual) |
| Vce Saturation Max Ib IC | 250mV @ 1mA, 10mA | 600mV @ 5mA, 100mA / 650mV @ 5mA, 100mA | 250mV @ 300µA, 10mA | 250mV @ 300µA, 10mA |
| Voltage Collector Emitter Breakdown Max | 50V | 45V | 50V | 50V |
| Resistor Base R1 | 4.7kOhms | -- | 10kOhms | 4.7kOhms |
| Resistor Emitter Base R2 | 47kOhms | -- | 47kOhms | 47kOhms |
| Action |
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