onsemi NVJD5121NT1G MOSFETs
Dual N−Channel Power MOSFET with ESD Protection 60V, 295mA, 1.6Ω, 3000-REEL
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
NVJD5121NT1G
Detailed Description
Dual N−Channel Power MOSFET with ESD Protection 60V, 295mA, 1.6Ω, 3000-REEL
Package
SOT-363-6
Lifecycle Status
Active
Datasheet
NVJD5121NT1G Datasheet
Quick Jump:
Technical Specifications
onsemi NVJD5121NT1G MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
2
Package / Case
SOT-363-6
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Configuration
2 N-Channel (Dual)
Continuous Drain Current ID
295 mA
Current Continuous Drain ID 25 C
295 mA
Drain to Source Resistance
1R
Alternate Parts Comparison (NVJD5121NT1G vs NVJD4152PT1G vs NVJD4401NT1G vs NVJD4158CT1G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Compliant |
| Lifecycle Status | Active | Active | Active | Active |
| Configuration | 2 N-Channel (Dual) | 2 P-Channel (Dual) | Dual | Dual |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -- | -55 ~ 150 |
| Package / Case | SOT-363-6 | 6-TSSOP | -- | -- |
| Mounting Type | Surface Mount | Surface Mount | -- | -- |
| Current Continuous Drain ID 25 C | 295 mA | 880mA (Ta) | -- | -- |
| Drain to Source Voltage Vdss | 60 V | 20V | -- | -- |
| Fet Feature | Standard | Standard | -- | -- |
| Gate Charge Qg Max Vgs | 0.9nC @ 4.5V | 2.2nC @ 4.5V | -- | -- |
| Grade | Automotive | Automotive | -- | -- |
| Input Capacitance Ciss Max Vds | 26pF @ 20V | 155pF @ 20V | -- | -- |
| Action |
Cross Reference
Manufacturer-stated alternates from official cross-reference tools. These are not a guaranteed pin-compatible drop-in. Qualify package, pinout, and electrical limits against the datasheet before a board change. See cross-reference vs drop-in compatible .
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