onsemi NVJD4152PT1G MOSFETs
Dual P−Channel Trench Small Signal ESD Protected MOSFET 20V, 0.88A, 260mΩ, 3000-REEL
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
NVJD4152PT1G
Detailed Description
Dual P−Channel Trench Small Signal ESD Protected MOSFET 20V, 0.88A, 260mΩ, 3000-REEL
Package
6-TSSOP, SC-88, SOT-363
Lifecycle Status
Active
Datasheet
NVJD4152PT1G Datasheet
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Technical Specifications
onsemi NVJD4152PT1G MOSFETs technical specifications.
General
Package / Case
6-TSSOP
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Description
MOSFET 2P-CH 20V 0.88A SC88
Detailed Description
Mosfet Array 20V 880mA (Ta) 272mW (Ta) Surface Mount SC-88/SC70-6/SOT-363
Gate Charge Qg Max Vgs
2.2nC @ 4.5V
Input Capacitance Ciss Max Vds
155pF @ 20V
Power Max
272mW (Ta)
Technology
MOSFET (Metal Oxide)
Alternate Parts Comparison (NVJD4152PT1G vs NVJD5121NT1G vs NVJD4401NT1G vs NVJD4158CT1G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | 6-TSSOP | -- | -- | -- |
| Mounting Type | Surface Mount | -- | -- | -- |
| Operating Temperature | -55°C ~ 150°C (TJ) | -- | -- | -- |
| Lifecycle Status | Active | -- | -- | -- |
| Configuration | 2 P-Channel (Dual) | -- | -- | -- |
| Current Continuous Drain ID 25 C | 880mA (Ta) | -- | -- | -- |
| Description | MOSFET 2P-CH 20V 0.88A SC88 | -- | -- | -- |
| Detailed Description | Mosfet Array 20V 880mA (Ta) 272mW (Ta) Surface Mount SC-88/SC70-6/SOT-363 | -- | -- | -- |
| Drain to Source Voltage Vdss | 20V | -- | -- | -- |
| Gate Charge Qg Max Vgs | 2.2nC @ 4.5V | -- | -- | -- |
| Grade | Automotive | -- | -- | -- |
| Input Capacitance Ciss Max Vds | 155pF @ 20V | -- | -- | -- |
| Action |
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