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onsemi NVJD4152PT1G MOSFETs

Dual P−Channel Trench Small Signal ESD Protected MOSFET 20V, 0.88A, 260mΩ, 3000-REEL

2 Activeonsemi6-TSSOP, SC-88, SOT-363$0.32
NVJD4152PT1G 6-TSSOP, SC-88, SOT-363 package illustration

Same model may have multiple batches, images only for reference.

NVJD4152PT1G
Manufacturer
Part Number (MPN)
NVJD4152PT1G
Detailed Description
Dual P−Channel Trench Small Signal ESD Protected MOSFET 20V, 0.88A, 260mΩ, 3000-REEL
Package
6-TSSOP, SC-88, SOT-363
Lifecycle Status
Active
Datasheet
PDF NVJD4152PT1G Datasheet
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Technical Specifications

onsemi NVJD4152PT1G MOSFETs technical specifications.

General

RoHS
Yes
Package / Case
6-TSSOP
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Gate Charge Qg Max Vgs
2.2nC @ 4.5V
Input Capacitance Ciss Max Vds
155pF @ 20V
Power Max
272mW (Ta)
Technology
MOSFET (Metal Oxide)
Grade
Automotive

Alternate Parts Comparison (NVJD4152PT1G vs NVJD5121NT1G vs NVJD4401NT1G vs NVJD4158CT1G)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
RoHSYesYesYesCompliant
Lifecycle StatusActiveActiveActiveActive
Configuration2 P-Channel (Dual)2 N-Channel (Dual)DualDual
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)---55 ~ 150
Package / Case6-TSSOPSOT-363-6----
Mounting TypeSurface MountSurface Mount----
Current Continuous Drain ID 25 C880mA (Ta)295 mA----
Drain to Source Voltage Vdss20V60 V----
Fet FeatureStandardStandard----
Gate Charge Qg Max Vgs2.2nC @ 4.5V0.9nC @ 4.5V----
GradeAutomotiveAutomotive----
Input Capacitance Ciss Max Vds155pF @ 20V26pF @ 20V----
Action

Cross Reference

Manufacturer-stated alternates from official cross-reference tools. These are not a guaranteed pin-compatible drop-in. Qualify package, pinout, and electrical limits against the datasheet before a board change. See cross-reference vs drop-in compatible .

This part is listed as a cross for

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