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onsemi NTJD1155LT1G MOSFETs

N/P-Channel Dual Power Switch, 1.3A, 175mR Rds(on), SC-88

840 Activeonsemi6-TSSOP, SC-88, SOT-363$0.46
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NTJD1155LT1G
Manufacturer
Part Number (MPN)
NTJD1155LT1G
Detailed Description
N/P-Channel Dual Power Switch, 1.3A, 175mR Rds(on), SC-88
Package
6-TSSOP, SC-88, SOT-363
Lifecycle Status
Active
Datasheet
PDF NTJD1155LT1G Datasheet
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Technical Specifications

onsemi NTJD1155LT1G MOSFETs technical specifications.

General

Package / Case
6-TSSOP
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Rds on Max ID Vgs
175mOhm @ 1.2A, 4.5V
Vgs Th Max ID
1V @ 250µA
Power Max
400mW
Technology
MOSFET (Metal Oxide)
Configuration
N and P-Channel
Drain to Source Voltage Vdss
8V

Alternate Parts Comparison (NTJD1155LT1G vs NTJD4158CT1G vs NTJD4401NT1G vs NTJD4152PT1G)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / Case6-TSSOP----6-TSSOP
Mounting TypeSurface Mount----Surface Mount
Operating Temperature-55°C ~ 150°C (TJ)-----55°C ~ 150°C (TJ)
Lifecycle StatusActive----Active
ConfigurationN and P-Channel----2 P-Channel (Dual)
Current Continuous Drain ID 25 C1.3A----880mA
DescriptionMOSFET N/P-CH 8V 1.3A SC88----MOSFET 2P-CH 20V 0.88A SC88
Detailed DescriptionMosfet Array 8V 1.3A 400mW Surface Mount SC-88/SC70-6/SOT-363----Mosfet Array 20V 880mA 272mW Surface Mount SC-88/SC70-6/SOT-363
Drain to Source Voltage Vdss8V----20V
Power Max400mW----272mW
Rds on Max ID Vgs175mOhm @ 1.2A, 4.5V----260mOhm @ 880mA, 4.5V
TechnologyMOSFET (Metal Oxide)----MOSFET (Metal Oxide)
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