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onsemi NVF6P02T3G MOSFETs

P-Channel MOSFET, -20V, -10A, 44mΩ, SOT-223

120,000onsemiSOT-223$1.02
NVF6P02T3G SOT-223 package illustration

Same model may have multiple batches, images only for reference.

NVF6P02T3G
Manufacturer
Part Number (MPN)
NVF6P02T3G
Detailed Description
P-Channel MOSFET, -20V, -10A, 44mΩ, SOT-223
Package
SOT-223
Lifecycle Status
Not For New Designs
Datasheet
PDF NVF6P02T3G Datasheet
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Technical Specifications

onsemi NVF6P02T3G MOSFETs technical specifications.

General

Package / Case
TO-261-4, TO-261AA
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Not For New Designs
Gate Charge Qg Max Vgs
20 nC @ 4.5 V
Vgs Max
±8V
Input Capacitance Ciss Max Vds
1200 pF @ 16 V
Power Dissipation Max
8.3W (Ta)
Fet Type
P-Channel
Technology
MOSFET (Metal Oxide)

Related Parts Comparison (NVF6P02T3G vs NVF5P03T3G vs NVF3055L108T3G vs NVF2955T1G)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
Package / CaseTO-261-4, TO-261AATO-261-4, TO-261AATO-261-4, TO-261AATO-261-4, TO-261AA
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)
Lifecycle StatusNot For New DesignsActiveObsoleteActive
Current Continuous Drain ID 25 C10A (Ta)3.7A (Ta)3A (Ta)2.6A (Ta)
Drain to Source Voltage Vdss20 V30 V60 V60 V
Drive Voltage Max Rds on Min Rds on2.5V, 4.5V4.5V, 10V5V10V
Fet TypeP-ChannelP-ChannelN-ChannelP-Channel
Gate Charge Qg Max Vgs20 nC @ 4.5 V38 nC @ 10 V15 nC @ 5 V14.3 nC @ 10 V
GradeAutomotiveAutomotiveAutomotiveAutomotive
Input Capacitance Ciss Max Vds1200 pF @ 16 V950 pF @ 25 V440 pF @ 25 V492 pF @ 25 V
Power Dissipation Max8.3W (Ta)1.56W (Ta)1.3W (Ta)1W (Ta)
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