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onsemi NVF2955T1G MOSFETs

P-Channel MOSFET -60V, -2.6A, 170mΩ SOT-223

177 ActiveonsemiSOT-223 (TO-261)$1.84
NVF2955T1G SOT-223 (TO-261) package illustration

Same model may have multiple batches, images only for reference.

NVF2955T1G
Manufacturer
Part Number (MPN)
NVF2955T1G
Detailed Description
P-Channel MOSFET -60V, -2.6A, 170mΩ SOT-223
Package
SOT-223 (TO-261)
Lifecycle Status
Active
Datasheet
PDF NVF2955T1G Datasheet
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Technical Specifications

onsemi NVF2955T1G MOSFETs technical specifications.

General

Package / Case
TO-261-4, TO-261AA
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Lifecycle Status
Active
Gate Charge Qg Max Vgs
14.3 nC @ 10 V
Vgs Max
±20V
Input Capacitance Ciss Max Vds
492 pF @ 25 V
Power Dissipation Max
1W (Ta)
Fet Type
P-Channel
Technology
MOSFET (Metal Oxide)

Related Parts Comparison (NVF2955T1G vs NVF3055L108T3G vs NVF3055L108T1G vs NVF5P03T3G)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
Package / CaseTO-261-4, TO-261AATO-261-4, TO-261AATO-261-4, TO-261AATO-261-4, TO-261AA
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 150°C (TJ)
Lifecycle StatusActiveObsoleteActiveActive
Current Continuous Drain ID 25 C2.6A (Ta)3A (Ta)3A (Ta)3.7A (Ta)
Drain to Source Voltage Vdss60 V60 V60 V30 V
Drive Voltage Max Rds on Min Rds on10V5V5V4.5V, 10V
Fet TypeP-ChannelN-ChannelN-ChannelP-Channel
Gate Charge Qg Max Vgs14.3 nC @ 10 V15 nC @ 5 V15 nC @ 5 V38 nC @ 10 V
GradeAutomotiveAutomotiveAutomotiveAutomotive
Input Capacitance Ciss Max Vds492 pF @ 25 V440 pF @ 25 V440 pF @ 25 V950 pF @ 25 V
Power Dissipation Max1W (Ta)1.3W (Ta)1.3W (Ta)1.56W (Ta)
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