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onsemi NTP190N65S3HF MOSFETs

Power MOSFET, N-Channel, SUPERFET® III, FRFET®, 650 V, 20 A, 190 mΩ, TO-220, 800-TUBE

28 ActiveonsemiTO-220-3$5.67
NTP190N65S3HF - No Image Available

Same model may have multiple batches, images only for reference.

NTP190N65S3HF
Manufacturer
Part Number (MPN)
NTP190N65S3HF
Detailed Description
Power MOSFET, N-Channel, SUPERFET® III, FRFET®, 650 V, 20 A, 190 mΩ, TO-220, 800-TUBE
Package
TO-220-3
Lifecycle Status
Active
Datasheet
PDF NTP190N65S3HF Datasheet
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Technical Specifications

onsemi NTP190N65S3HF MOSFETs technical specifications.

General

Series
FRFET®, SuperFET® III
Package / Case
TO-220-3
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Vgs Th Max ID
5V @ 430µA
Gate Charge Qg Max Vgs
34 nC @ 10 V
Vgs Max
±30V
Input Capacitance Ciss Max Vds
1610 pF @ 400 V
Power Dissipation Max
162W (Tc)

Alternate Parts Comparison (NTP190N65S3HF vs KSD560YTU vs FDP085N10A-F102 vs FCP104N60F)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-220-3TO-220-3TO-220-3TO-220-3
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)150°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 150°C (TJ)
Lifecycle StatusActiveActiveActiveActive
SeriesFRFET®, SuperFET® III--PowerTrench®HiPerFET™, Polar™
Current Continuous Drain ID 25 C20A (Tc)--96A (Tc)37A (Tc)
Drain to Source Voltage Vdss650 V--100 V600 V
Drive Voltage Max Rds on Min Rds on10V--10V10V
Fet TypeN-Channel--N-ChannelN-Channel
Gate Charge Qg Max Vgs34 nC @ 10 V--40 nC @ 10 V145 nC @ 10 V
Input Capacitance Ciss Max Vds1610 pF @ 400 V--2695 pF @ 50 V6130 pF @ 25 V
Power Dissipation Max162W (Tc)--188W (Tc)357W (Tc)
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