onsemi FCP165N65S3 MOSFETs
Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 19 A, 165 mΩ, TO-220, 800-TUBE
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
FCP165N65S3
Base Model
Detailed Description
Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 19 A, 165 mΩ, TO-220, 800-TUBE
Package
TO-220-3
Lifecycle Status
Active
Datasheet
FCP165N65S3 Datasheet
Quick Jump:
Technical Specifications
onsemi FCP165N65S3 MOSFETs technical specifications.
General
Series
SuperFET® III
RoHS
Yes
Number of Channels
1 Channel
Package / Case
TO-220-3
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Vgs Th Max ID
4.5V @ 1.9mA
Gate Charge Qg Max Vgs
39 nC @ 10 V
Vgs Max
±30V
Alternate Parts Comparison (FCP165N65S3 vs FCP165N60E vs FCP104N60F vs FCP130N60)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Series | SuperFET® III | SuperFET® II | HiPerFET™, Polar™ | SuperFET® II |
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Lifecycle Status | Active | Active | Active | Active |
| Current Continuous Drain ID 25 C | 19A (Tc) | 23A (Tc) | 37A (Tc) | 28A (Tc) |
| Drain to Source Voltage Vdss | 650 V | 600 V | 600 V | 600 V |
| Drive Voltage Max Rds on Min Rds on | 10V | 10V | 10V | 10V |
| Fet Type | N-Channel | N-Channel | N-Channel | N-Channel |
| Gate Charge Qg Max Vgs | 39 nC @ 10 V | 75 nC @ 10 V | 145 nC @ 10 V | 70 nC @ 10 V |
| Input Capacitance Ciss Max Vds | 1500 pF @ 400 V | 2434 pF @ 380 V | 6130 pF @ 25 V | 3590 pF @ 380 V |
| Power Dissipation Max | 154W (Tc) | 227W (Tc) | 357W (Tc) | 278W (Tc) |
| Action |
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