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onsemi NTLJS17D0P03P8ZTAG MOSFETs

P-Channel JFET, -30V, 4-Terminal, Dual, 1-Element

17 Activeonsemi6-PQFN (2x2)$1.24
NTLJS17D0P03P8ZTAG - No Image Available

Same model may have multiple batches, images only for reference.

NTLJS17D0P03P8ZTAG
Manufacturer
Part Number (MPN)
NTLJS17D0P03P8ZTAG
Detailed Description
P-Channel JFET, -30V, 4-Terminal, Dual, 1-Element
Package
6-PQFN (2x2)
Lifecycle Status
Active
Datasheet
PDF NTLJS17D0P03P8ZTAG Datasheet
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Technical Specifications

onsemi NTLJS17D0P03P8ZTAG MOSFETs technical specifications.

General

Package / Case
6-PowerWDFN
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Vgs Th Max ID
3V @ 250µA
Gate Charge Qg Max Vgs
38 nC @ 10 V
Vgs Max
±25V
Input Capacitance Ciss Max Vds
1600 pF @ 15 V
Fet Type
P-Channel
Power Dissipation Max
860mW (Ta)

Alternate Parts Comparison (NTLJS17D0P03P8ZTAG vs NTLJS4114NT1G vs NTLJS3113PT1G vs NTLJS2103PTBG)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / Case6-PowerWDFN--6-WDFN Exposed Pad6-WDFN Exposed Pad
Mounting TypeSurface Mount--Surface MountSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)---55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Lifecycle StatusActive--ObsoleteActive
Current Continuous Drain ID 25 C7A (Ta)--3.5A (Ta)3.5A (Ta)
Drain to Source Voltage Vdss30 V--20 V12 V
Drive Voltage Max Rds on Min Rds on4.5V, 10V--1.5V, 4.5V1.2V, 4.5V
Fet TypeP-Channel--P-ChannelP-Channel
Gate Charge Qg Max Vgs38 nC @ 10 V--15.7 nC @ 4.5 V15 nC @ 4.5 V
Input Capacitance Ciss Max Vds1600 pF @ 15 V--1329 pF @ 16 V1157 pF @ 6 V
Power Dissipation Max860mW (Ta)--700mW (Ta)700mW (Ta)
Rds on Max ID Vgs11.3mOhm @ 10A, 10V--40mOhm @ 3A, 4.5V40mOhm @ 3A, 4.5V
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