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onsemi NTLJS3113PT1G MOSFETs

P-Channel MOSFET -20V, -7.7A, 40mΩ, DFN6

11,796onsemi6-WDFN (2x2)$0.81
NTLJS3113PT1G 6-WDFN (2x2) package illustration

Same model may have multiple batches, images only for reference.

NTLJS3113PT1G
Manufacturer
Part Number (MPN)
NTLJS3113PT1G
Detailed Description
P-Channel MOSFET -20V, -7.7A, 40mΩ, DFN6
Package
6-WDFN (2x2)
Lifecycle Status
Obsolete
Datasheet
PDF NTLJS3113PT1G Datasheet
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Technical Specifications

onsemi NTLJS3113PT1G MOSFETs technical specifications.

General

Series
µCool™
Package / Case
6-WDFN Exposed Pad
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Obsolete
Vgs Th Max ID
1V @ 250µA
Gate Charge Qg Max Vgs
15.7 nC @ 4.5 V
Vgs Max
±8V
Input Capacitance Ciss Max Vds
1329 pF @ 16 V
Power Dissipation Max
700mW (Ta)

Alternate Parts Comparison (NTLJS3113PT1G vs NTLJS4114NT1G vs NTLJS4114NTAG vs NTLJS5D0N03CTAG)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / Case6-WDFN Exposed PadDFN6-WDFN Exposed Pad6-PowerWDFN
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Lifecycle StatusObsoleteActiveActiveActive
Current Continuous Drain ID 25 C3.5A (Ta)3.6A (Ta)3.6A (Ta)11.2A (Ta)
Drain to Source Voltage Vdss20 V30 V30 V30 V
Drive Voltage Max Rds on Min Rds on1.5V, 4.5V1.8V, 4.5V1.8V, 4.5V4.5V, 10V
Fet TypeP-ChannelN-ChannelN-ChannelN-Channel
Gate Charge Qg Max Vgs15.7 nC @ 4.5 V13 nC @ 4.5 V13 nC @ 4.5 V18 nC @ 10 V
Input Capacitance Ciss Max Vds1329 pF @ 16 V650 pF @ 15 V650 pF @ 15 V1255 pF @ 15 V
Rds on Max ID Vgs40mOhm @ 3A, 4.5V35mOhm @ 2A, 4.5V35mOhm @ 2A, 4.5V4.38mOhm @ 10A, 10V
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
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