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onsemi NSVT65011MW6T1G BJTs

DUAL MATCHED NPN XSTR 65V, 3000-REEL

35 Activeonsemi6-TSSOP, SC-88, SOT-363$0.63
NSVT65011MW6T1G 6-TSSOP, SC-88, SOT-363 package illustration

Same model may have multiple batches, images only for reference.

NSVT65011MW6T1G
Manufacturer
Part Number (MPN)
NSVT65011MW6T1G
Detailed Description
DUAL MATCHED NPN XSTR 65V, 3000-REEL
Package
6-TSSOP, SC-88, SOT-363
Lifecycle Status
Active
Datasheet
PDF NSVT65011MW6T1G Datasheet
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Technical Specifications

onsemi NSVT65011MW6T1G BJTs technical specifications.

General

RoHS
Yes
Package / Case
6-TSSOP
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
200 @ 2mA, 5V
Power Max
380mW
Frequency Transition
100MHz
Transistor Type
2 NPN (Dual)
Current Collector IC Max
100mA

Alternate Parts Comparison (NSVT65011MW6T1G vs SSVBC846BPDW1T1G vs NSVMUN5211DW1T2G vs NSVMUN5331DW1T1G)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / Case6-TSSOP6-TSSOP6-TSSOP6-TSSOP
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Lifecycle StatusActiveActiveActiveActive
RoHSYes--YesYes
Current Collector Cutoff Max15nA (ICBO)--500nA500nA
Current Collector IC Max100mA--100mA100mA
Dc Current Gain Hfe Min IC Vce200 @ 2mA, 5V--35 @ 5mA, 10V8 @ 5mA, 10V
PackageSC-88-6--SOT-363-6SOT-363-6
Power Max380mW--385mW250mW
QualificationAEC-Q101--AEC-Q101AEC-Q101
Transistor Type2 NPN (Dual)--2 NPN - Pre-Biased (Dual)1 NPN, 1 PNP - Pre-Biased (Dual)
Vce Saturation Max Ib IC600mV @ 5mA, 100mA--250mV @ 300µA, 10mA250mV @ 5mA, 10mA
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