onsemi NSVMUN5312DW1T2G BJTs
Complementary Bipolar Digital Transistor (BRT), 3000-REEL
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
NSVMUN5312DW1T2G
Detailed Description
Complementary Bipolar Digital Transistor (BRT), 3000-REEL
Package
6-TSSOP, SC-88, SOT-363
Lifecycle Status
Active
Datasheet
NSVMUN5312DW1T2G Datasheet
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Technical Specifications
onsemi NSVMUN5312DW1T2G BJTs technical specifications.
General
RoHS
Yes
Package / Case
6-TSSOP
Mounting Type
Surface Mount
Lifecycle Status
Active
Vce Saturation Max Ib IC
250mV @ 300µA, 10mA
Current Collector Cutoff Max
500nA
Power Max
250mW
Grade
Automotive
Transistor Type
1 NPN, 1 PNP - Pre-Biased (Dual)
Qualification
AEC-Q101
Alternate Parts Comparison (NSVMUN5312DW1T2G vs NSVMUN5316DW1T1G vs NSVMUN5214DW1T3G vs NSVMUN5314DW1T3G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | 6-TSSOP | 6-TSSOP | 6-TSSOP | 6-TSSOP |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| RoHS | Yes | Yes | Yes | Yes |
| Lifecycle Status | Active | Active | Active | Active |
| Current Collector Cutoff Max | 500nA | 500nA | 500nA | 500nA |
| Current Collector IC Max | 100mA | 100mA | 100mA | 100mA |
| Dc Current Gain Hfe Min IC Vce | 60 @ 5mA, 10V | 160 @ 5mA, 10V | 80 @ 5mA, 10V | 80 @ 5mA, 10V |
| Grade | Automotive | Automotive | Automotive | Automotive |
| Package | SOT-363-6 | TSSOP-6 | SC-88-6 | SC88-6 |
| Power Max | 250mW | 250mW | 250mW | 250mW |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Resistor Base R1 | 22kOhms | 4.7kOhms | 10kOhms | 10kOhms |
| Action |
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