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onsemi NSVMUN5312DW1T2G BJTs

Complementary Bipolar Digital Transistor (BRT), 3000-REEL

5 Activeonsemi6-TSSOP, SC-88, SOT-363$0.47
NSVMUN5312DW1T2G 6-TSSOP, SC-88, SOT-363 package illustration

Same model may have multiple batches, images only for reference.

NSVMUN5312DW1T2G
Manufacturer
Part Number (MPN)
NSVMUN5312DW1T2G
Detailed Description
Complementary Bipolar Digital Transistor (BRT), 3000-REEL
Package
6-TSSOP, SC-88, SOT-363
Lifecycle Status
Active
Datasheet
PDF NSVMUN5312DW1T2G Datasheet
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Technical Specifications

onsemi NSVMUN5312DW1T2G BJTs technical specifications.

General

RoHS
Yes
Package / Case
6-TSSOP
Mounting Type
Surface Mount
Lifecycle Status
Active
Vce Saturation Max Ib IC
250mV @ 300µA, 10mA
Current Collector Cutoff Max
500nA
Power Max
250mW
Grade
Automotive
Transistor Type
1 NPN, 1 PNP - Pre-Biased (Dual)
Qualification
AEC-Q101

Alternate Parts Comparison (NSVMUN5312DW1T2G vs NSVMUN5316DW1T1G vs NSVMUN5214DW1T3G vs NSVMUN5314DW1T3G)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / Case6-TSSOP6-TSSOP6-TSSOP6-TSSOP
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
RoHSYesYesYesYes
Lifecycle StatusActiveActiveActiveActive
Current Collector Cutoff Max500nA500nA500nA500nA
Current Collector IC Max100mA100mA100mA100mA
Dc Current Gain Hfe Min IC Vce60 @ 5mA, 10V160 @ 5mA, 10V80 @ 5mA, 10V80 @ 5mA, 10V
GradeAutomotiveAutomotiveAutomotiveAutomotive
PackageSOT-363-6TSSOP-6SC-88-6SC88-6
Power Max250mW250mW250mW250mW
QualificationAEC-Q101AEC-Q101AEC-Q101AEC-Q101
Resistor Base R122kOhms4.7kOhms10kOhms10kOhms
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