onsemi NSVDTA114EET1G BJTs
PNP Bipolar Digital Transistor (BRT), 3000-REEL
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
NSVDTA114EET1G
Detailed Description
PNP Bipolar Digital Transistor (BRT), 3000-REEL
Package
SC-75, SOT-416
Lifecycle Status
Active
Datasheet
NSVDTA114EET1G Datasheet
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Technical Specifications
onsemi NSVDTA114EET1G BJTs technical specifications.
General
Package / Case
SC-75, SOT-416
Mounting Type
Surface Mount
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
35 @ 5mA, 10V
Vce Saturation Max Ib IC
250mV @ 300µA, 10mA
Current Collector Cutoff Max
500nA
Power Max
200 mW
Transistor Type
PNP - Pre-Biased
Grade
Automotive
Current Collector IC Max
100 mA
Alternate Parts Comparison (NSVDTA114EET1G vs NSVDTA144WET1G vs MMBT3906TT1G vs NSVMMBT2222ATT1G)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | SC-75, SOT-416 | SC-75, SOT-416 | SC-75, SOT-416 | SC-75, SOT-416 |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Lifecycle Status | Active | Active | Active | Active |
| Current Collector IC Max | 100 mA | 100 mA | 200 mA | 600 mA |
| Dc Current Gain Hfe Min IC Vce | 35 @ 5mA, 10V | 80 @ 5mA, 10V | 100 @ 10mA, 1V | 100 @ 150mA, 10V |
| Power Max | 200 mW | 200 mW | 200 mW | 150 mW |
| Transistor Type | PNP - Pre-Biased | PNP - Pre-Biased | PNP | NPN |
| Vce Saturation Max Ib IC | 250mV @ 300µA, 10mA | 250mV @ 300µA, 10mA | 400mV @ 5mA, 50mA | 1V @ 50mA, 500mA |
| Voltage Collector Emitter Breakdown Max | 50 V | 50 V | 40 V | 40 V |
| Action |
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