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onsemi NSVMMBT2222ATT1G BJTs

NPN Bipolar Junction Transistor, 3000-REEL

2,355 ActiveonsemiSC-75, SOT-416$0.08
NSVMMBT2222ATT1G SC-75, SOT-416 package illustration

Same model may have multiple batches, images only for reference.

NSVMMBT2222ATT1G
Manufacturer
Part Number (MPN)
NSVMMBT2222ATT1G
Detailed Description
NPN Bipolar Junction Transistor, 3000-REEL
Package
SC-75, SOT-416
Lifecycle Status
Active
Datasheet
PDF NSVMMBT2222ATT1G Datasheet
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Technical Specifications

onsemi NSVMMBT2222ATT1G BJTs technical specifications.

General

RoHS
Yes
Package / Case
SC-75, SOT-416
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
100 @ 150mA, 10V
Power Max
150 mW
Frequency Transition
300MHz
Transistor Type
NPN
Current Collector IC Max
600 mA

Related Parts Comparison (NSVMMBT2222ATT1G vs NSVMMBT3906TT1G vs NSVDTA144WET1G vs DTA124XET1G)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
Package / CaseSC-75, SOT-416SC-75, SOT-416SC-75, SOT-416SC-75, SOT-416
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
RoHSYesYesYesYes
Lifecycle StatusActiveActiveActiveActive
Current Collector IC Max600 mA200 mA100 mA100 mA
Dc Current Gain Hfe Min IC Vce100 @ 150mA, 10V100 @ 10mA, 1V80 @ 5mA, 10V80 @ 5mA, 10V
PackageSC-75-3SC-75-3SC-75-3SC-75-3
Power Max150 mW200 mW200 mW200 mW
Transistor TypeNPNPNPPNP - Pre-BiasedPNP - Pre-Biased
Vce Saturation Max Ib IC1V @ 50mA, 500mA400mV @ 5mA, 50mA250mV @ 300µA, 10mA250mV @ 1mA, 10mA
Voltage Collector Emitter Breakdown Max40 V40 V50 V50 V
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