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onsemi NSVMMBT2222ATT1G BJTs

NPN Bipolar Junction Transistor, 3000-REEL

2,355 ActiveonsemiSC-75, SOT-416$0.08
NSVMMBT2222ATT1G SC-75, SOT-416 package illustration

Same model may have multiple batches, images only for reference.

NSVMMBT2222ATT1G
Manufacturer
Part Number (MPN)
NSVMMBT2222ATT1G
Detailed Description
NPN Bipolar Junction Transistor, 3000-REEL
Package
SC-75, SOT-416
Lifecycle Status
Active
Datasheet
PDF NSVMMBT2222ATT1G Datasheet
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Technical Specifications

onsemi NSVMMBT2222ATT1G BJTs technical specifications.

General

RoHS
Yes
Package / Case
SC-75, SOT-416
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Dc Current Gain Hfe Min IC Vce
100 @ 150mA, 10V
Power Max
150 mW
Frequency Transition
300MHz
Transistor Type
NPN
Current Collector IC Max
600 mA

Alternate Parts Comparison (NSVMMBT2222ATT1G vs NSVMMBT3906TT1G vs NSVDTA144WET1G vs DTA124XET1G)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseSC-75, SOT-416SC-75, SOT-416SC-75, SOT-416SC-75, SOT-416
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
RoHSYesYesYesYes
Lifecycle StatusActiveActiveActiveActive
Current Collector IC Max600 mA200 mA100 mA100 mA
Dc Current Gain Hfe Min IC Vce100 @ 150mA, 10V100 @ 10mA, 1V80 @ 5mA, 10V80 @ 5mA, 10V
PackageSC-75-3SC-75-3SC-75-3SC-75-3
Power Max150 mW200 mW200 mW200 mW
Transistor TypeNPNPNPPNP - Pre-BiasedPNP - Pre-Biased
Vce Saturation Max Ib IC1V @ 50mA, 500mA400mV @ 5mA, 50mA250mV @ 300µA, 10mA250mV @ 1mA, 10mA
Voltage Collector Emitter Breakdown Max40 V40 V50 V50 V
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