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onsemi NSVBC857BTT1G BJTs

PNP Bipolar Transistor, 3000-REEL

594,000 ActiveonsemiSC-75, SOT-416$0.09
NSVBC857BTT1G - No Image Available

Same model may have multiple batches, images only for reference.

NSVBC857BTT1G
Manufacturer
Part Number (MPN)
NSVBC857BTT1G
Detailed Description
PNP Bipolar Transistor, 3000-REEL
Package
SC-75, SOT-416
Lifecycle Status
Active
Datasheet
PDF NSVBC857BTT1G Datasheet
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Technical Specifications

onsemi NSVBC857BTT1G BJTs technical specifications.

General

Package / Case
SC-75, SOT-416
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Description
TRANS PNP 45V 0.1A SC75 SOT416
Detailed Description
Bipolar (BJT) Transistor PNP 45 V 100 mA 100MHz 200 mW Surface Mount SC-75, SOT-416
Dc Current Gain Hfe Min IC Vce
220 @ 2mA, 5V
Power Max
200 mW
Frequency Transition
100MHz
Transistor Type
PNP

Alternate Parts Comparison (NSVBC857BTT1G vs NSVDTA144WET1G vs DTA124XET1G vs DTC123JET1G)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseSC-75, SOT-416SC-75, SOT-416SC-75, SOT-416SC-75, SOT-416
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Lifecycle StatusActiveActiveActiveActive
Current Collector Cutoff Max15nA (ICBO)500nA500nA500nA
Current Collector IC Max100 mA100 mA100 mA100 mA
Dc Current Gain Hfe Min IC Vce220 @ 2mA, 5V80 @ 5mA, 10V80 @ 5mA, 10V80 @ 5mA, 10V
DescriptionTRANS PNP 45V 0.1A SC75 SOT416TRANS PREBIAS PNP 50V 0.1A SC75TRANS PREBIAS PNP 50V 0.1A SC75TRANS PREBIAS NPN 50V 0.1A SC75
Detailed DescriptionBipolar (BJT) Transistor PNP 45 V 100 mA 100MHz 200 mW Surface Mount SC-75, SOT-416Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 200 mW Surface Mount SC-75, SOT-416Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 200 mW Surface Mount SC-75, SOT-416Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 200 mW Surface Mount SC-75, SOT-416
Power Max200 mW200 mW200 mW200 mW
Transistor TypePNPPNP - Pre-BiasedPNP - Pre-BiasedNPN - Pre-Biased
Vce Saturation Max Ib IC650mV @ 5mA, 100mA250mV @ 300µA, 10mA250mV @ 1mA, 10mA250mV @ 1mA, 10mA
Voltage Collector Emitter Breakdown Max45 V50 V50 V50 V
Action

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