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onsemi NSS40301MDR2G BJTs

Low VCE(sat) Transistor, Dual NPN, 40 V, 3.0 A, SOIC-8 Narrow Body, 2500-REEL

52 ActiveonsemiSOIC-8$1.07
NSS40301MDR2G SOIC-8 package illustration

Same model may have multiple batches, images only for reference.

NSS40301MDR2G
Manufacturer
Part Number (MPN)
NSS40301MDR2G
Detailed Description
Low VCE(sat) Transistor, Dual NPN, 40 V, 3.0 A, SOIC-8 Narrow Body, 2500-REEL
Package
SOIC-8
Lifecycle Status
Active
Datasheet
PDF NSS40301MDR2G Datasheet
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Technical Specifications

onsemi NSS40301MDR2G BJTs technical specifications.

General

RoHS
Yes
Package
SOIC-8

Alternate Parts Comparison (NSS40301MDR2G vs NSS40302PDR2G vs NSS20601CF8T1G vs NSS20500UW3TBG)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
RoHSYesYesYesYes
PackageSOIC-8--ChipFET-8WDFN-3
Package / Case--SOIC8-SMD, Flat Leads3-WDFN Exposed Pad
Mounting Type--Surface MountSurface MountSurface Mount
Operating Temperature---55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Lifecycle Status--ActiveActiveActive
Current Collector Cutoff Max--100nA (ICBO)100nA (ICBO)100nA (ICBO)
Current Collector IC Max--3 A6 A5 A
Dc Current Gain Hfe Min IC Vce--180 @ 1A, 2V200 @ 1A, 2V200 @ 2A, 2V
Frequency Transition--100 MHz140MHz100MHz
Polarity--NPN, PNPNPNPNP
Power Max--653 mW830 mW875 mW
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